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Physical properties of amorphous silicon-carbon alloys produced by different techniques

Published online by Cambridge University Press:  31 January 2011

A. Carbone ,
F. Demichelis ,
G. Kaniadakis ,
G. Della Mea ,
F. Freire  and
P. Rava
A. Carbone
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
F. Demichelis
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
G. Kaniadakis
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
G. Della Mea
Affiliation:
Dipartimento di Ingegneria dei Materiali, Universitá di Trento e Unitá, I.N.F.N. Padova, Italy
F. Freire
Affiliation:
Dipartimento di Ingegneria dei Materiali, Universitá di Trento e Unitá, I.N.F.N. Padova, Italy
P. Rava
Affiliation:
Elettrorava S.p.A. 10040 Savonera, Torino, Italy
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Abstract

Results of a study of compositional, optical, electrical, and structural properties of hydrogen amorphous silicon carbide (a-SiC:H) prepared, respectively, by glow-discharge (GD) and reactive sputtering (SP) techniques at power densities varying between 1.25 · 10−2 and 1.25 · 10−1 W · cm−2 for GD samples are presented. Measurements are reported on the composition, optical and IR spectroscopy, and on the temperature dependence of electrical conductivity. All experimental observations suggest that the power density only slightly affects the physical properties of GD silicon-rich samples, whereas those of the carbon-rich SP samples depend more strongly on this deposition parameter. Finally, it is shown that the GD technique can provide films with better characteristics, whereas samples of similar composition prepared by sputtering have higher compositional disorder and are more inhomogeneous.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 12 , December 1990 , pp. 2877 - 2881
Copyright
Copyright © Materials Research Society 1990

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