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Segregation of Vanadium at the WC/Co Interface in VC-doped WC-Co

Published online by Cambridge University Press:  31 January 2011

A. Jaroenworaluck
Affiliation:
Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7-3-1, Bunkyo-ku, Tokyo 113–8656, Japan
T. Yamamoto
Affiliation:
Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7-3-1, Bunkyo-ku, Tokyo 113–8656, Japan
Y. Ikuhara
Affiliation:
Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7-3-1, Bunkyo-ku, Tokyo 113–8656, Japan
T. Sakuma
Affiliation:
Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7-3-1, Bunkyo-ku, Tokyo 113–8656, Japan
T. Taniuchi
Affiliation:
Tsukuba Plant, Mitsubishi Materials Corp., 1511 Furumagi, Ishige-machi, Yuuki-gun, Ibaraki 300–2795, Japan
K. Okada
Affiliation:
Tsukuba Plant, Mitsubishi Materials Corp., 1511 Furumagi, Ishige-machi, Yuuki-gun, Ibaraki 300–2795, Japan
T. Tanase
Affiliation:
Tsukuba Plant, Mitsubishi Materials Corp., 1511 Furumagi, Ishige-machi, Yuuki-gun, Ibaraki 300–2795, Japan
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Abstract

Morphology of carbide grain in WC–12 wt.% Co–0.5 wt.% VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.

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Copyright
Copyright © Materials Research Society 1998

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