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Selective and low temperature synthesis of polycrystalline diamond

Published online by Cambridge University Press:  31 January 2011

R. Ramesham ,
T. Roppel ,
C. Ellis ,
D.A. Jaworske  and
W. Baugh
R. Ramesham
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
T. Roppel
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
C. Ellis
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
D.A. Jaworske
Affiliation:
Lewis Research Center, National Aeronautics and Space Administration, Cleveland, Ohio 44135–3127
W. Baugh
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
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Abstract

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

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Articles
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Journal of Materials Research , Volume 6 , Issue 6 , June 1991 , pp. 1278 - 1286
Copyright
Copyright © Materials Research Society 1991

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References

1.Davidson, J. L., Ramesham, R., and Ellis, C., J. Electrochem. Soc. 137, 3206 (1990).CrossRefGoogle Scholar
2.Kaneko, H., Kamada, M., Kuwae, R., Sawabe, A., and Inuzuka, T., Appl. Surf. Sci. 33/34, 546 (1988).CrossRefGoogle Scholar
3.Saito, Y., Sato, K., Tanaka, H., Fujita, K., and Matuda, S., J. Mater. Sci. 23, 842 (1988).CrossRefGoogle Scholar
4.Pinneo, M. J., Yokoto, S., and Ravi, K. V., “The low temperature deposition of diamond on gallium arsenide,” Third Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #T4 (1988).Google Scholar
5.Kitabatake, M. and Wasa, K., J. Appl. Phys. 58, 1693 (1985).CrossRefGoogle Scholar
6.Deutchman, A. H., Partyka, R. J., and Lewis, J. C., Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #T3 (1989).Google Scholar
7.Deshpandey, C., Bunshah, R. F., Doerr, H. J., and Radhakrishna, M. C., “Low temperature deposition of smooth transparent diamond films,” Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #T4 (1989).Google Scholar
8.Liou, Y., Inspektor, A., Weimer, R., and Messier, R., Appl. Phys. Lett. 55, 631 (1989).CrossRefGoogle Scholar
9.Ong, T. P. and Chang, R. P. H., Appl. Phys. Lett. 55, 2063 (1989).CrossRefGoogle Scholar
10.Hsu, W. L., Fuchs, E. A., and McCarty, K. F., “Diamond growth at low substrate temperatures,” Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #THP12a (1989).Google Scholar
11.Hsu, W. L., Tung, D. M., Fuchs, E. A., McCarty, K. F., Joshi, A., and Nimmagadda, R., Appl. Phys. Lett. 55, 2739 (1989).CrossRefGoogle Scholar
12.Davidson, J. L., Ramesham, R., and Ellis, C., “Selective deposition of diamond films,” Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #TP3 (1989).Google Scholar
13.Davidson, J. L., Ellis, C., and Ramesham, R., J. Electron. Mater. 18, 711 (1989).CrossRefGoogle Scholar
14.Knight, D. S. and White, W. B., J. Mater. Res. 4, 385 (1989).CrossRefGoogle Scholar
15.Piano, L. S. and Adar, F., “Raman spectroscopy of polycrystalline diamond films,” Proc. S. P. I. E.- The International Society for Optical Engineering, International Conference on Raman and Luminescence Spectroscopy in Technology 822, 52 (1987).Google Scholar
16.Ramesham, R., Roppel, T., Hajek, B. F., and Ellis, C., J. Electrochem. Soc. 137, 3203 (1990).CrossRefGoogle Scholar
17.Chauhan, S. P., Angus, J. C., and Gardner, N. C., J. Appl. Phys. 47, 4746 (1976).CrossRefGoogle Scholar
18.Deryagin, B. V. and Fedoseev, D. V., Growth of Diamond and Graphite from the Gas Phase (Izd. Nauka, Moscow, USSR, 1977), Chap. 4.Google Scholar
19.Ramesham, R., Ellis, C., Roppel, T., Jaworske, D. A., and Baugh, W., in Plasma Processing and Synthesis of Materials III, edited by Apelian, D. and Szekely, J. (Mater. Res. Soc. Symp. Proc. 190, Pittsburgh, PA, 1990).Google Scholar
20.Ramesham, R., Ellis, C., and Roppel, T., “Low temperature selective deposition of diamond thin films,” Third International Conference on Amorphous and Crystalline Silicon Carbide, edited by Harris, G. L. (ICACSC90), Howard University, Washington, DC, Abstract #V.4, April 12–13 (1990)Google Scholar