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Selective and low temperature synthesis of polycrystalline diamond

Published online by Cambridge University Press:  31 January 2011

R. Ramesham ,
T. Roppel ,
C. Ellis ,
D.A. Jaworske  and
W. Baugh
R. Ramesham
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
T. Roppel
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
C. Ellis
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
D.A. Jaworske
Affiliation:
Lewis Research Center, National Aeronautics and Space Administration, Cleveland, Ohio 44135–3127
W. Baugh
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849–5201
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Abstract

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

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Articles
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Journal of Materials Research , Volume 6 , Issue 6 , June 1991 , pp. 1278 - 1286
Copyright
Copyright © Materials Research Society 1991

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