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Selective nucleation of silicon clusters in CVD

Published online by Cambridge University Press:  31 January 2011

Frank G. Shi  and
John H. Seinfeld
Frank G. Shi
Affiliation:
Department of Chemical Engineering, 210-41, California Institute of Technology, Pasadena, California 91125
John H. Seinfeld
Affiliation:
Department of Chemical Engineering, 210-41, California Institute of Technology, Pasadena, California 91125
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Abstract

A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH2Cl2/HCl/H2.

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Articles
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Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1809 - 1815
Copyright
Copyright © Materials Research Society 1992

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