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Solid-state reactions of the Ag–Cu–Ti thin film–Al2O3 substrate system

Published online by Cambridge University Press:  31 January 2011

Seiichi Suenaga ,
Miho Koyama ,
Shinji Arai  and
Masako Nakahashi
Seiichi Suenaga
Affiliation:
Materials and Devices Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Miho Koyama
Affiliation:
Materials and Devices Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Shinji Arai
Affiliation:
Materials and Devices Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Masako Nakahashi
Affiliation:
Materials and Devices Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Abstract

A new interpretation of the reaction mechanism between active metal thin-film filler and ceramic substrate is proposed. The authors predict the possibility of prebonding reactions, prior to melting of the filler, at the interface of the system described above. To prove this, solid-state reactions of Ag–Cu–Ti thin films on sapphire substrates have been studied with Auger electron spectroscopy (AES) and x-ray diffraction (XRD). Reaction process and products have been clarified at the temperature just below the melting point of the filler. It is evident that Cu3Ti3O (diamond structure of Fd3m) is formed by the reaction between Cu3Ti and O which results from the reduction of sapphire. It seems that Cu3Ti3O contributes to bonding between metals and sapphire as an intermediate phase.

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Articles
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Journal of Materials Research , Volume 8 , Issue 8 , August 1993 , pp. 1805 - 1811
Copyright
Copyright © Materials Research Society 1993

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References

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