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Structural and electrical properties of single Ga/ZnO nanofibers synthesized by electrospinning

Published online by Cambridge University Press:  17 May 2012

Yuval Shmueli ,
Gennady E. Shter ,
Ossama Assad ,
Hossam Haick ,
Philippe Sonntag ,
Philippe Ricoux  and
Gideon S. Grader
Yuval Shmueli
Affiliation:
Department of Chemical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel
Gennady E. Shter
Affiliation:
Department of Chemical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel
Ossama Assad
Affiliation:
Department of Chemical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel
Hossam Haick
Affiliation:
Department of Chemical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel
Philippe Sonntag
Affiliation:
Hutchinson S.A, Research Center, Rue Gustave Noury - BP31, F-45120 Chalette-sur-Loing, France
Philippe Ricoux
Affiliation:
TOTAL S.A/DG, Tour Coupole, 29F40, 92078 Paris La Defense Cedex, France
Gideon S. Grader*
Affiliation:
Department of Chemical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel
*
a)Address all correspondence to this author. e-mail: grader@ce.technion.ac.il
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Abstract

Nanofibers (NFs) of Ga-doped ZnO (GZO) were prepared by electrospinning of polymer–salts solution. Sintering profiles reported in the literature led to loss of the fibrous structure. Hence, the morphology, thermal stability, and phase composition of green and sintered fibers were investigated as function of sintering conditions to elucidate this degradation process. Optimal results were obtained at 400 °C for 30 min. This low temperature sintering of GZO fibers has not been previously reported. The fibers were porous with a significant surface area, making it possible to test their sensitivity to environmental changes. In particular, the response of the GZO NFs to changes in humidity was demonstrated for the first time. The electrical and sensing properties of single NFs prepared at these conditions were studied using a field-effect transistor mode.

Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 13 , 14 July 2012 , pp. 1672 - 1679
Copyright
Copyright © Materials Research Society 2012

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