Hostname: page-component-7c8c6479df-24hb2 Total loading time: 0 Render date: 2024-03-28T08:57:22.565Z Has data issue: false hasContentIssue false

Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

Published online by Cambridge University Press:  31 January 2011

Jaegab Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136–702, Korea
Heejung Yang
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136–702, Korea
Jinhyung Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136–702, Korea
Hyunjung Shin
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136–702, Korea
Jiyoung Kim
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136–702, Korea
Changoh Jeong
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics Company, Ltd., Kiheung-Eup, Yongin 449–711, Korea
Beomseok Cho
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics Company, Ltd., Kiheung-Eup, Yongin 449–711, Korea
Kyuha Chung
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics Company, Ltd., Kiheung-Eup, Yongin 449–711, Korea
Eungu Lee
Affiliation:
Department of Materials Engineering, Chosun University, Kwangju 501–759, Korea
Get access

Abstract

The effect of Mg in Ag(Mg)/SiO2/Si multilayers on the adhesion, passivation, and resistivity following vacuum annealing at 200–500 °C has been investigated. The annealing of Ag(Mg)/SiO2/Si multilayers produced surface and interfacial MgO layers, resulting in a MgO/Ag/MgO/SiO2/Si structure. The formation of a surface MgO/Ag bilayer structure provided excellent passivation against air and CF4 plasma chemistry. In addition, the adhesion of Ag to SiO2 was improved due to the formation of an interfacial MgO layer resulting from the reaction of segregated Mg with SiO2. However, the negligible solubility of Si in Ag prevented the dissolution of free silicon into the Ag(Mg) film produced from the reaction Mg + SiO2 = MgO + free Si, which in turn limited the reaction between Mg and SiO2, which led to a decrease in the adhesion of Ag to SiO2 at the higher temperature. The use of an O2 plasma prior to Ag(Mg) alloy deposition on SiO2 produced an oxygen-rich surface on the SiO2, which allowed for the enhanced reaction of the segregated Mg and SiO2 at the surface, thus resulting in markedly increased adhesion properties.

Type
Articles
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wang, Y. and Alford, T. L., Appl. Phys. Lett. 74, 52 (1999).CrossRefGoogle Scholar
2.Nguyen, P., Zeng, Y., and Alford, T.L., J. Vac. Sci. Technol. B 19, 158 (2001).CrossRefGoogle Scholar
3.Jeong, C.O., Roh, N.S., Kim, S.G., Park, H.S., Kim, C.W., Sakong, D.S., Seok, J.H., Chung, K.H., Lee, W.H., Gan, D., Ho, P.S., Cho, B.S., Kang, B.J., Yang, H.J., Ko, Y.K., Lee, J.G., J. Electron Mater. 31, 610 (2002).CrossRefGoogle Scholar
4.Hauder, M., Gstottner, J., Hansch, W., and Schmitt-Landsiedel, D., Appl. Phys. Lett. 78, 838 (2001).CrossRefGoogle Scholar
5.Kondoh, E. and Asano, T., Proc. of Advanced Metallization Conference 1999, edited by Gross, M.E., Gessner, T., Kobayashi, N., and Yasuda, Y. (MRS, Warrendale, PA, 2000), p. 219.Google Scholar
6.Hong, S.J., Yang, H.J., Kim, J.Y., Shin, H.J., Lee, J.H., Ko, Y.K., Lee, , Kang, B.J., Cho, B.S., Jeong, C.O., Cung, K.H., and Lee, M., J. Kor. Phys. Soc. 41, 417 (2002).Google Scholar
7.Sharma, S.K. and Spitz, J., Thin Solid Films 65, 339 (1980).CrossRefGoogle Scholar
8.Lee, W., Cho, H., Cho, B., Kim, J., Kim, Y., Jung, W-G., Kwon, H., Lee, J., Lee, C., Reucroft, P.J., and Lee, J., J. Vac. Sci. Technol. A 18, 2972 (2000).CrossRefGoogle Scholar
9.Lee, W., Cho, H., Cho, B., Kim, J., Kim, Y-S., Jung, W-G., Kwon, H., Lee, J., Reucroft, P.J., Lee, C., and Lee, J., J. Electrochem. Soc. 147, 3066 (2000).CrossRefGoogle Scholar
10.Lee, W.H., Cho, H.L., Cho, B.S., Kim, J.Y., Nam, W.J., Kim, Y-S., Jung, W.G., Kwon, H., Lee, J.H., Lee, J.G., Reucroft, P.J., Lee, C.M.. and Lee, E.G., Appl. Phys. Lett. 77, 2192 (2000).CrossRefGoogle Scholar
11.Lanford, W.A., Ding, P.J., Wang, W., Hymes, S., and Muraka, S.P., Thin Solid Films 262, 234 (1995).CrossRefGoogle Scholar
12.Ding, P.J., Lanford, W.A., Hymes, S., and Murarka, S.P., Appl. Phys. Lett. 64, 2897 (1994).CrossRefGoogle Scholar
13.Muller, C.O., Corrosion (Houston) 47, 146 (1991).CrossRefGoogle Scholar
14.Gadre, K.S. and Alford, T.L., J. Vac. Sci. Technol. B 18, 2814 (2000).CrossRefGoogle Scholar