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Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions

Published online by Cambridge University Press:  31 January 2011

W. Jiang*
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
H. Wang
Affiliation:
Texas A&M University, College Station, Texas 77843
I. Kim
Affiliation:
Texas A&M University, College Station, Texas 77843
Y. Zhang
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
W.J. Weber
Affiliation:
Department of Materials Science & Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200; and Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6138
*
a)Address all correspondence to this author. e-mail: weilin.jiang@pnl.gov
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Abstract

Irradiation-induced amorphization in nanocrystalline and single-crystal 3C-SiC has been studied using 1 MeV Si+ ions under identical irradiation conditions at room temperature and 400 K. The disordering behavior has been characterized using in situ ion channeling and ex situ x-ray diffraction methods. The results show that, compared with single-crystal 3C-SiC, full amorphization of small 3C-SiC grains (˜3.8 nm in size) at room temperature occurs at a slightly lower dose. Grain size decreases with increasing dose until a fully amorphized state is attained. The amorphization dose increases at 400 K relative to room temperature. However, at 400 K, the amorphization dose for 2.0 nm grains is about a factor of 4 and 8 smaller than for 3.0 nm grains and bulk single-crystal 3C-SiC, respectively. The behavior is attributed to the preferential amorphization at the interface.

Type
Articles
Copyright
Copyright © Materials Research Society 2010

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Footnotes

b)

This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr_policy

References

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