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Augmented instrumented indentation using nonlinear electrical contact current-voltage curves

Published online by Cambridge University Press:  31 January 2011

Lei Fang
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802
James G. Collins
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
Lawrence H. Friedman*
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802
*
a) Address all correspondence to this author. e-mail: lfriedman@engr.psu.edu
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Abstract

An electrical technique was recently developed to measure the in situ contact area continuously during instrumented indentation by simultaneously monitoring electrical contact response between a conductive indenter tip and a conductive sample. This technique has the potential to overcome limitations of the Oliver-Pharr method caused by the lack of a direct contact area measurement. However, the electrical contact current-voltage (I-V) curves measured from the technique were nonlinear, posing a significant challenge to inferring accurate in situ contact areas. To overcome this challenge and extend the electrical technique to more applications, various I-V curve analysis methods were investigated for their abilities to infer in situ contact area and hardness. Annealed Cu was indented using both linear and exponential loading tests. When analyzing the resulting data, the feasibility of each method was evaluated and the optimal methods to calculate the in situ contact area and hardness were determined. It was found that a simple summation of the absolute values of area under I-V curves or the area under I-V curves at positive voltages yielded the most robust area measure, whereas error in the inferred contact area was systematic and primarily from velocity dependence of the I-V response.

Type
Articles
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1.Bhushan, B. and Li, X.: Nanomechanical characterisation of solid surfaces and thin films. Int. Mater. Rev. 48, 125 (2003).CrossRefGoogle Scholar
2.Bull, S.J.: Nanoindentation of coatings. J. Phys. D: Appl. Phys. 38, R393 (2005).CrossRefGoogle Scholar
3.Gouldstone, A., Chollacoop, N., Dao, M., Li, J., Minor, A.M., and Shen, Y.L.: Indentation across size scales and disciplines: Recent developments in experimentation and modeling. Acta Mater. 55, 4015 (2007).CrossRefGoogle Scholar
4.Pharr, G.M. and Oliver, W.C.: Measurement of thin film mechanical properties using nanoindentation. MRS Bull. 17, 28 (1992).CrossRefGoogle Scholar
5.Oliver, W.C. and Pharr, G.M.: An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992).CrossRefGoogle Scholar
6.Oliver, W.C. and Pharr, G.M.: Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology. J. Mater. Res. 19, 3 (2004).CrossRefGoogle Scholar
7.Bolshakov, A. and Pharr, G.M.: Influences of pileup on the measurement of mechanical properties by load and depth-sensing indentation techniques. J. Mater. Res. 13, 1049 (1998).CrossRefGoogle Scholar
8.Cheng, Y.T. and Cheng, C.M.: Effects of ‘sinking in' and ‘piling up” on estimating the contact area under load in indentation. Philos. Mag. Lett. 78, 115 (1998).CrossRefGoogle Scholar
9.Tsui, T.Y. and Pharr, G.M.: Substrate effects on nanoindentation mechanical property measurement of soft films on hard substrates. J. Mater. Res. 14, 292 (1999).CrossRefGoogle Scholar
10.Saha, R. and Nix, W.D.: Effects of the substrate on the determination of thin film mechanical properties by nanoindentation. Acta Mater. 50, 23 (2002).CrossRefGoogle Scholar
11.Han, S.M., Saha, R., and Nix, W.D.: Determining hardness of thin films in elastically mismatched film-on-substrate systems using nanoindentation. Acta Mater. 54, 1571 (2006).CrossRefGoogle Scholar
12.Fang, L., Muhlstein, C.L., Collins, J., Romasco, A., and Friedman, L.H.: Continuous electrical in situ contact area measurement during instrumented indentation. J. Mater. Res. 23, 2480 (2008).CrossRefGoogle Scholar
13.Neamen, D.A.: Semiconductor Physics and Devices—Basic Principles (McGraw-Hill Publishing Company, 2003).Google Scholar
14.Rhoderick, E.H. and Williams, R.H.: Metal-Semiconductor Contacts (Clarendon Press, 1988).Google Scholar
15.Holm, R. and Holm, E.: Electrical Contacts: Theory and Application (Springer-Verlag, New-York, 1967).CrossRefGoogle Scholar
16.Sharvin, Y.V.: A possible method for studying Fermi surfaces. Soviet Physics JETR 21, 655 (1965).Google Scholar
17.Wexler, G.: The size effect and the non-local Boltzmann transport equation in orifice and disk geometry. Proc. Phys. Soc. 89, 927 (1966).CrossRefGoogle Scholar
18.Sneddon, I.N.: The relation between load and penetration in the axisymmetric boussinesq problem for a punch of arbitrary profile. Int. J. Eng. Sci. 3, 47 (1965).CrossRefGoogle Scholar
19.Chen, X. and Vlassak, J.: Numerical study on the measurement of thin film mechanical properties by means of nanoindentation. J. Mater. Res. 16, 2974 (2001).CrossRefGoogle Scholar
20.Howes, V.R., Goldsmid, H.J., and Baird, C.A.: Hardness measurement at constant depth using an indenter partially coated with a conducting film. J. Phys. E: Sci. Instrum. 20, 1507 (1987).CrossRefGoogle Scholar
21.Wieczorek, L., Howes, V.R., and Goldsmid, H.J.: Electrical contact resistance and its relationship to hardness. J. Mater. Sci. 21, 1423 (1986).CrossRefGoogle Scholar
22.Goldsmid, H.J., Howes, V.R., and Baird, C.A.: Measurement of hardness using a semiconductor diamond indentor. J. Mater. Sci. Lett. 6, 1043 (1987).CrossRefGoogle Scholar
23.Ruffell, S., Bradby, J.E., Williams, J.S., and Warren, O.L.: An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon. J. Mater. Res. 22, 578 (2007).CrossRefGoogle Scholar
24.Lim, Y.Y. and Chaudhri, M.M.: The effect of the indenter load on the nanohardness of ductile materials: An experimental study on polycrystalline work-hardened and annealed oxygen-free copper. Philos. Mag. A 79, 2979 (1999).CrossRefGoogle Scholar
25.Press, W.H., Teukolsky, S.A., Vetterling, W.T., and Flannery, B.P.: Numerical Recipes in Fortran: The Art of Scientific Computing (Cambridge University Press, 1992).Google Scholar
26.Fischer-Cripps, A.C.: Nanoindentation (Springer-Verlag, New York, 2004).CrossRefGoogle Scholar
27.Lampert, M.A. and Mark, P.: Current Injections in Solids (Academic Press, New York and London, 1970).Google Scholar
28.Taylor, J.R.: An Introduction to Error Analysis: The Study of Uncertainties in Physical Measurements (University Science Books, 1997).Google Scholar
29.Atkinson, M.: Further analysis of the size effect in indentation hardness tests of some metals. J. Mater. Res. 10, 2908 (1995).CrossRefGoogle Scholar
30.Crinon, E. and Evans, J.T.: The effect of surface roughness, oxide film thickness and interfacial sliding on the electrical contact resistance of aluminum. Mater. Sci. Eng., A 242, 121 (1998).CrossRefGoogle Scholar
31.Barthel, E.: Adhesive elastic contacts: JKR and more. J. Phys. D: Appl. Phys. 41, 1 (2008).CrossRefGoogle Scholar
32.Timsit, R.S.: Electrical conduction through small contact spots. IEEE Trans. Compon. Packag. Technol. 29, 727 (2006).CrossRefGoogle Scholar
33.Mikrajuddin, A., Shi, F.G., Kim, H.K., and Okuyama, K.: Size-dependent electrical constriction resistance for contacts of arbitrary size: From Sharvin to Holm limits. Mater. Sci. Semicond. Process. 2, 321 (1999).CrossRefGoogle Scholar
34.Doerner, M.F. and Nix, W.D.: A method for interpreting the data from depth-sensing indentation instruments. J. Mater. Res. 1, 601 (1986).CrossRefGoogle Scholar