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Broadband near-infrared emission from Bi-doped aluminosilicate glasses

Published online by Cambridge University Press:  31 January 2011

Shifeng Zhou ,
Gaofeng Feng ,
Jiaxing Bao ,
Hucheng Yang  and
Jianrong Qiu
Shifeng Zhou
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
Gaofeng Feng
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
Jiaxing Bao
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
Hucheng Yang
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
Jianrong Qiu*
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: qjr@zju.edu.cn
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Abstract

Bi-doped sodium–potassium aluminosilicate glasses were synthesized and characterized. Broadband near-infrared (IR) emission covered the whole telecommunication wavelength region, with a maximum peak at about 1250 nm, a full width at half-maximum of about 370 nm, and a lifetime longer than 420 μs. The present glasses are potential materials for tunable lasers and optical amplifiers. The decrease of active Bi center concentration with the increase of Na2O content and the addition of CeO2are first reported here, and the IR emission center in sodium–potassium aluminosilicate glasses might be ascribed to low-valence-state bismuth, most probably, Bi+.

Keywords

BiLuminescenceOptical properties
Type
Rapid Communications
Information
Journal of Materials Research , Volume 22 , Issue 6 , June 2007 , pp. 1435 - 1438
Copyright
Copyright © Materials Research Society2007

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References

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