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Characterization of thermal plasma CVD diamond coatings and the intermediate SiC phase

Published online by Cambridge University Press:  31 January 2011

C. Tsai ,
W. Gerberich ,
Z.P. Lu ,
J. Heberlein  and
E. Pfender
C. Tsai
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
W. Gerberich
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
Z.P. Lu
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
J. Heberlein
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
E. Pfender
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

Diamond films have been successfully deposited by DC thermal plasma jet CVD at a rate of 40 μm/h under atmospheric and subatmospheric pressures. Transmission electron microscopy (TEM) has been used for the characterization of the diamond films and the intermediate phase. The orientation and the distribution of β-SiC at the interface between the diamond and silicon substrate have been observed using selected-area electron diffraction with the associated dark-field images. X-ray diffraction, scanning electron microscopy, and Raman spectroscopy are used for the characterization of the produced diamond films. Potential applications of selected-area channeling patterns are discussed for investigating the correlations between the growth direction and the crystalline perfection.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 10 , October 1991 , pp. 2127 - 2133
Copyright
Copyright © Materials Research Society 1991

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