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Composition tunable memory and threshold switching in Al20AsxTe80−x semiconducting glasses

Published online by Cambridge University Press:  31 January 2011

S. Murugavel  and
S. Asokan
S. Murugavel
Affiliation:
Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India
S. Asokan*
Affiliation:
Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India
*
a) Address correspondence to this author. e-mail: sasokan@isu.iisc.ernet.in
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Abstract

I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 10 , October 1998 , pp. 2982 - 2987
Copyright
Copyright © Materials Research Society 1998

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