Hostname: page-component-cb9f654ff-hn9fh Total loading time: 0 Render date: 2025-08-05T05:06:59.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors

Published online by Cambridge University Press:  03 March 2011

H.N. Al-Shareef ,
A.I. Kingon ,
X. Chen ,
K.R. Bellur  and
O. Auciello
H.N. Al-Shareef
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
A.I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
X. Chen
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
K.R. Bellur
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
O. Auciello
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, and MCNC, Electronics Technology Division, Research Triangle Park, North Carolina 27709-2889
Get access

Abstract

Pb(Zr0.53Ti0.47)O3 (PZT) thin film capacitors have been fabricated with four electrode combinations: Pt/PZT/Pt/SiO2Si, RuO2/PZT/Pt/SiO2/Si, RuO2/PZT/RuO2/SiO2/Si, and Pt/PZT/RuO2/SiO2/Si. It is shown that polarization fatigue is determined largely by the electrode type (Pt vs RuO2), and microstructure has only a second-order effect on fatigue. If either the top or bottom electrode is platinum, significant polarization fatigue occurs. Fatigue-free capacitors are obtained only when both electrodes are RuO2. In contrast, the bottom electrode is found to have a major effect on the leakage characteristics of the PZT capacitors, presumably via microstructural modifications. Capacitors with bottom RuO2 electrodes show high leakage currents (J = 10−3-10−5 A/cm2 at 1 V) irrespective of the top electrode material. Capacitors with Pt bottom electrodes have much lower leakage currents (J = 10−8 A/cm2 at 1 V) irrespective of the top electrode material. At low voltage, the I-V curves show ohmic behavior and negligible polarity dependence for all capacitor types. At higher voltages, the leakage current is probably Schottky emission controlled for the capacitors with Pt bottom electrodes.

Information

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2968 - 2975
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Scott, J. F. and Paz de Araujo, C.A., Science 246, 1400 (1989).CrossRefGoogle Scholar
2Geideman, W. A., IEEE Trans, on Ultrasonics, Ferroelectrics, and Frequency Control 38 (6), 704 (1991).Google Scholar
3Ramesh, R., Chan, W. K., Wilkens, B., Gilchrist, H., Sands, T., Tarascon, J. M., Keramidas, V. G., Fork, D. K., Lee, J., and Safari, A., Appl. Phys. Lett. 61, 1537 (1992).Google Scholar
4Bernstein, S. D., Wong, T. Y., Kisler, Y., and Tustison, R. W., J. Mater. Res. 8, 12 (1993). J. Mater. Res., Vol. 9, No. 11, Nov 1994Google Scholar
5Bellur, K. R., Al-Shareef, H.N., Rou, S. H., Gifford, K. D., Auciello, O., and Kingon, A. I., Proc. 8th Int. Symp. on Applications of Ferroelectncs, IEEE publication No. 92CH3080-9 (1992), p. 448.Google Scholar
6Vijay, D. P., Kwok, C. K., Pan, W., and Desu, S. B., Proc. 8th Int. Symp. on Applications of Ferroelectncs, IEEE publicationNo. 92CH3080-9 (1992), p. 408.Google Scholar
7Dat, R., Lichtenwalner, D. J., Auciello, O., and Kingon, A. I., Appl. Phys. Lett. 64, 2673 (1994).CrossRefGoogle Scholar
8Eom, C.B., van Dover, R.B., Phillips, J. M., Werder, D. J., Marshal, J. H., Chen, C. H., Cava, R. J., Fleming, R. M., and Fork, D. K., Appl. Phys. Lett. 63, 2570 (1993).CrossRefGoogle Scholar
9Chen, X., Kingon, A. I., Al-Shareef, H.N., and Bellur, K.R., Ferroelectrics (1994, in press).Google Scholar
10Yoo, I. K. and Desu, S. B., Proc. 8th Int. Symp. on Applications of Ferroelectncs, IEEE publication No. 93CH3080-9 (1992), p. 225.Google Scholar
11Al-Shareef, H.N., Gifford, K. D., Rou, S. H., Hren, P. D., Auciello, O., and Kingon, A. I., Integrated Ferroelectrics 3, 321 (1993).Google Scholar
12Al-Shareef, H.N., Bellur, K., Auciello, O., and Kingon, A. I., Ferroelectrics (1994, in press).Google Scholar
13Schwartz, R. W., Assink, R. A., and Headley, T. J., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1993), p. 245.Google Scholar
14Duiker, H. M. and Beale, P. D., Phys. Rev. 41, 490 (1990).Google Scholar
15Scott, J. F., Araujo, C. A., Melnick, B. M., McMillan, L.D., and Zuleeg, R., J. Appl. Phys. 70, 382 (1991).Google Scholar
16Yoo, I. K. and Desu, S. B., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 323.Google Scholar
17Shepherd, W. H., in Ferroelectric Thin Films, edited by Myers, E.R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 277.Google Scholar
18Chen, X., Kingon, A. I., Mantese, L., Auciello, O., and Hsieh, K. Y., Integrated Ferroelectrics 3, 355 (1993).Google Scholar
19Chen, X., Kingon, A. I., Bellur, K. R., and Auciello, O., presented at the 5th Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO, April, 1993.Google Scholar
20Al-Shareef, H.N., Gifford, K. D., Ameen, M. S., Rou, S. H., Hren, P. D., Auciello, O., and Kingon, A. I., Ceram. Trans. 25, 97 (1991).Google Scholar
21Longo, J. M., Raccah, P. M., and Goodenough, J. B., Mater. Res. Bull. IX, 191 (1969).Google Scholar
22Al-Shareef, H.N., Bellur, K. R., Auciello, O., and Kingon, A. I., presented at the 6th Int. Symp. on Integrated Ferroelectrics, Monterey, CA.Google Scholar
23Yoo, I. K., Desu, S. B., and Xing, J., in Ferroelectric Thin Films III, edited by Tuttle, B. A., Myers, E. R., Desu, S. B., and Larsen, P. K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993), p. 165.Google Scholar
24Auciello, O., Gifford, K. D., and Kingon, A. I., unpublished.Google Scholar