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Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon

  • Leonardus B. Bayu Aji (a1), S. Ruffell (a1), B. Haberl (a1), J.E. Bradby (a1) and J.S. Williams (a1)...
Abstract

The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100% at a temperature of 340 °C, a temperature well before the temperature where the average bond-angle distortion is fully minimized. This suggests that multiple processes are occurring during full relaxation.

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a)Address all correspondence to this author. e-mail: leonardus.aji@anu.edu.au
References
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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