Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-20T03:08:11.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Cubic silicon nitride embedded in amorphous silicon dioxide

Published online by Cambridge University Press:  31 January 2011

Ming Zhang ,
Hongliang He ,
F. F. Xu ,
T. Sekine ,
T. Kobayashi  and
Y. Bando
Ming Zhang*
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106–7204
Hongliang He
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
F. F. Xu
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
T. Sekine
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
T. Kobayashi
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
Y. Bando
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
*
a)Address all correspondence to this author.
Get access

Abstract

A cubic silicon nitride embedded in amorphous SiO2 compound has been characterized by means of high-resolution analytical electron microscopy. The specimen was prepared from β–Si3N4 powders at a high pressure and temperature by shock wave compression. The typical high-resolution electron microscopy image from one small crystallite together with its diffractodiagram pattern indicated that the Si3N4 crystallites had a cubic symmetry. The electron energy loss spectrum from the small crystallite is very different from those of outside amorphous SiO2 phase and raw β–Si3N4 particles, and there are more N elements that were detected in this small crystallite than those in standard Si3N4.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 8 , August 2001 , pp. 2179 - 2181
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Mo, S., Ouyang, L., Ching, W.Y., Tanaka, I., Koyama, Y., and Riedel, R., Phys. Rev. Lett. 83, 5046 (1999).Google Scholar
2Brook, R.J., Nature, 400, 312 (1999).Google Scholar
3Zerr, A., Miehe, G., Serghiou, G., Schwarz, M., Kroke, E., Riedel, R., FueB, H., Kroll, P., and Boehler, R., Nature 400, 340 (1999).Google Scholar
4Sekine, T., He, H.L., Kobayashi, T., Zhang, M., and Xu, F.F., Appl. Phys. Lett. 76, 3706 (2000).Google Scholar
5He, H., Sekine, T., Kobayashi, T., Hirosaki, H., and Suzuki, I., Phys. Rev. B 62, 11412 (2000).Google Scholar
6Zhang, M., He, H., Xu, F.F., Sekine, T., Kobayashi, T., and Bando, Y., J. Appl. Phys. 88, 3070 (2000).CrossRefGoogle Scholar
7Zhang, M., Xu, C.L., Cao, L.M., Wu, D.H., and Wang, W.K., J. Mater. Res. 15, 253 (2000).CrossRefGoogle Scholar