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Double resonance Raman scattering process in 2D materials

Published online by Cambridge University Press:  23 May 2019

Rafael N. Gontijo ,
Geovani C. Resende ,
Cristiano Fantini  and
Bruno R. Carvalho
Rafael N. Gontijo
Affiliation:
Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil
Geovani C. Resende
Affiliation:
Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil
Cristiano Fantini
Affiliation:
Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil
Bruno R. Carvalho*
Affiliation:
Departamento de Física, Universidade Federal do Rio Grande do Norte, Natal, Rio Grande do Norte 59078-970, Brazil
*
a)Address all correspondence to this author. e-mail: brunorc@fisica.ufrn.br
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Abstract

Raman spectroscopy is a fundamental tool for the characterization of two-dimensional materials. It provides insights into the electronic and vibrational properties of these materials and is particularly rich in features when the incident laser energy approaches the electronic energy transition of the material. Among these features, the double resonance Raman process provides important information on the electron, phonon, and electron–phonon properties. It was on the study of carbon-related materials that the double resonance bands sparkled showing their potential and, since then, have been deeply searched in the study of novel 2D materials. Here, the authors review the double resonance Raman process in 2D materials focusing on graphene and semiconducting MoS2 highlighting the origin of the bands mediated by the two-phonon and phonon–defect processes. The authors discuss the observed properties of the double resonance bands and compare the processes for graphene and MoS2 to find guiding principles for the appearance of double resonance bands. The authors also discuss the new findings of the intervalley scattering process in transition metal dichalcogenides. A brief discussion of the defect-induced bands in both materials is also presented.

Keywords

two-dimensional materialgraphenetransition metal dichalcogenidesmolybdenum disulfideRaman scatteringdouble resonance processdefectsvibrational propertieselectronic properties
Type
Invited Feature Paper - REVIEW
Information
Journal of Materials Research , Volume 34 , Issue 12 , 28 June 2019 , pp. 1976 - 1992
Copyright
Copyright © Materials Research Society 2019 

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Footnotes

This paper has been selected as an Invited Feature Paper.

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