Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-14T00:58:09.520Z Has data issue: false hasContentIssue false
  • English
  • Français

The effect of Ag electrode processing on (Nb, Ba) doped TiO2 ceramics

Published online by Cambridge University Press:  31 January 2011

Chi-Jen Chen  and
Jenn-Ming Wu
Chi-Jen Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China
Jenn-Ming Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China
Get access

Abstract

Since the characteristics of the electrode made from Ag paste greatly affect the dielectric properties of (Nb, Ba) doped TiO2 ceramics, the processing condition, i.e., baking temperature, was investigated. Low melting glass binder contained in Ag paste reacted with TiO2 ceramics to form an interface layer between Ag electrode and TiO2 ceramics during baking. The interface layer was identified as Bi2Ti2O7 by x-ray diffraction (XRD), and the thickness of the Bi2Ti2O7 layer was estimated from line profiles of EPMA and dielectric properties. The interface layers were found to increase with baking temperature. Increased baking temperature lowered the relative dielectric constant and dielectric dissipation factor of TiO2 ceramics, while it raised the resistivity. Controlling the baking condition of the Ag paste electrode on TiO2 ceramics resulted in reasonably good dielectric properties and excellent temperature stability.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 7 , July 1990 , pp. 1530 - 1537
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Yan, M. F. and Rhodes, W. W., Advances in Ceramics, Vol. 7, “Additives and Interfaces in Electronic Ceramics,” edited by Yan, M. F. and Heuer, A. H. (The American Ceramic Society, Inc., Columbus, OH, 1983), pp. 226–238.Google Scholar
2Wu, J. M. and Chen, C. J., J. Mater. Sci. 23, 4157 (1988).CrossRefGoogle Scholar
3Wu, J. M. and Chen, C. J., Mater. Sci. Eng. B 3, 343 (1989).CrossRefGoogle Scholar
4Chen, C. J. and Wu, J. M., J. Mater. Sci. 24, 2871 (1989).CrossRefGoogle Scholar
5Wu, J. M. and Sung, H. M., Mater. Sci. Eng. B 3, 265 (1989).CrossRefGoogle Scholar
6Koops, C. G., Phys. Rev. 83, 121 (1951).CrossRefGoogle Scholar
7Johnson, O. W. and Deford, J. W., J. Appl. Phys. 43, 807 (1972).CrossRefGoogle Scholar
8I, G.. Skanavi and Demeshina, A. I., Sov. Phys.-JETP 4, 524 (1957).Google Scholar