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Effect of gallium doping and ball milling process on the thermoelectric performance of n-type ZnO

Published online by Cambridge University Press:  24 July 2012

Priyanka Jood ,
Germanas Peleckis ,
Xiaolin Wang  and
Shi Xue Dou
Priyanka Jood*
Affiliation:
Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2519, Australia
Germanas Peleckis
Affiliation:
Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2519, Australia
Xiaolin Wang
Affiliation:
Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2519, Australia
Shi Xue Dou
Affiliation:
Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2519, Australia
*
a)Address all correspondence to this author. e-mail: pj991@uowmail.edu.au
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Abstract

We report a systematic investigation of the thermoelectric properties of n-type Ga-doped ZnO synthesized using different ball milling conditions. Samples fabricated by the high-energy ball milling resulted in a highly dense layered structure with randomly distributed voids. These samples measured the lowest room temperature thermal conductivity, i.e., 27 W/mK due to increased phonon scattering. Furthermore, the Ga:ZnO system showed a metal–semiconductor transition above 300 K with transition temperature decreasing with increasing doping level. Measurement of the activation energy revealed the presence of one donor level around 3.9–7.8 meV and a deeper donor level around 15.4–18.1 meV below the conduction band for the Ga-doped samples. For Ga-doped ZnO, Seebeck coefficient of −185 μV/K (at 1000 K) was achieved, which is ∼30–45% higher than the values previously reported for Zn:Ga system. Jonker plot analysis was used to analyze the scope of Ga:ZnO bulk system.

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Journal of Materials Research , Volume 27 , Issue 17: Focus Issue: Oxide Semiconductors , 14 September 2012 , pp. 2278 - 2285
Copyright
Copyright © Materials Research Society 2012

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