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Effect of hydrogen dilution on electronic properties of a-SiHx films deposited by low-frequency plasma

Published online by Cambridge University Press:  31 January 2011

A. I. Kosarev ,
A. J. Torres ,
C. Zuniga ,
A. S. Abramov ,
P. Rosales  and
A. Sibaja
A. I. Kosarev
Affiliation:
National Institute for Astrophysics, Optics and Electronics, Apdo. Postal 51y216, Puebla 7200, Mexico
A. J. Torres
Affiliation:
National Institute for Astrophysics, Optics and Electronics, Apdo. Postal 51y216, Puebla 7200, Mexico
C. Zuniga
Affiliation:
National Institute for Astrophysics, Optics and Electronics, Apdo. Postal 51y216, Puebla 7200, Mexico
A. S. Abramov
Affiliation:
A.F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
P. Rosales
Affiliation:
National Institute for Astrophysics, Optics and Electronics, Apdo. Postal 51y216, Puebla 7200, Mexico
A. Sibaja
Affiliation:
National Institute for Astrophysics, Optics and Electronics, Apdo. Postal 51y216, Puebla 7200, Mexico
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Abstract

The effect of hydrogen dilution during plasma deposition on hydrogen incorporation and the optical and electrical properties of a-SiHx films were studied. The films were grown in capacitive low-frequency (f = 10 and 110 kHz) discharge in SiH4 diluted with H2, varying the ratio RH of the gases H2/SiH4 from RH = 0 to 40. The optical absorption coefficient and optical bandgap were changed with RH. Si–H bonding, studied by infrared spectroscopy, depended on RH. Hydrogen concentration in the films estimated from infrared spectra was in the range 20–30%. We observed the significant effect of RH on the temperature dependence of conductivity σ(T) and on the subgap absorption spectra measured by the constant photocurrent method. The reduction of subgap absorption up to 1.5 order of magnitude was observed with increasing RH.

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Articles
Information
Journal of Materials Research , Volume 18 , Issue 8 , August 2003 , pp. 1918 - 1925
Copyright
Copyright © Materials Research Society 2003

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