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Elastic modulus of single-crystal GaN nanowires

  • Hai Ni (a1), Xiaodong Li (a1), Guosheng Cheng (a2) and Robert Klie (a3)
Abstract

The deformation behavior of single-crystal GaN nanowires was studied by directly performing three-point bending tests on each individual nanowire in an atomic force microscope. The elastic modulus calculated from the load–displacement response of the nanowires was 43.9 ± 2.2 GPa. Single-crystal GaN nanowires investigated in this study were synthesized by chemical vapor deposition techniques based on the vapor–liquid–solid growth mechanism and had a diameter range from 60 to 110 nm. Crystalline GaN nanowires did not show obvious plastic deformation in bending and usually failed in a brittle manner.

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a) Address all correspondence to this author. e-mail: lixiao@engr.sc.edu
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
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