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Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

Published online by Cambridge University Press:  04 September 2018

Yuichi Yamazaki ,
Yoji Chiba ,
Takahiro Makino ,
Shin-Ichiro Sato ,
Naoto Yamada ,
Takahiro Satoh ,
Yasuto Hijikata ,
Kazutoshi Kojima ,
Sang-Yun Lee  and
Takeshi Ohshima
Yuichi Yamazaki*
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
Yoji Chiba
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan; and Graduate School of Science and Engineering, Saitama University, Saitama 338-0825, Japan
Takahiro Makino
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
Shin-Ichiro Sato
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
Naoto Yamada
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
Takahiro Satoh
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
Yasuto Hijikata
Affiliation:
Graduate School of Science and Engineering, Saitama University, Saitama 338-0825, Japan
Kazutoshi Kojima
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Sang-Yun Lee
Affiliation:
Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
Takeshi Ohshima
Affiliation:
National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
*
a)Address all correspondence to this author. e-mail: yamazaki.yuichi@qst.go.jp
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Abstract

Single photon sources (SPS) are an important building block for realizing quantum technologies for computing, communication, and sensing. For industrialization, electrically controllable color centers acting as SPS are required. We have demonstrated the creation of electrically controllable silicon vacancies (VSis) in the SiC pn junction diode fabricated by proton beam writing (PBW). PBW was successfully used to introduce electrically controllable VSi without degradation of the diode performance. The dependence of the electroluminescence (EL) and photoluminescence (PL) intensities from VSi on H+ fluence revealed that the emission efficiency of EL is less than that of PL. For EL, the supply of carriers (electrons and/or holes) was restricted due to the resistive region around each VSi introduced by PBW. The results suggest that further improvement in the VSi creation process without defects acting as majority carrier removal centers (highly resistive region) and nonradiative centers by optimization of PBW conditions are key points to realize highly sensitive quantum sensors using VSi.

Keywords

ion-beam processingdefectsoptical properties
Type
Invited Feature Paper
Information
Journal of Materials Research , Volume 33 , Issue 20 , 29 October 2018 , pp. 3355 - 3361
Copyright
Copyright © Materials Research Society 2018 

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Footnotes

This paper has been selected as an Invited Feature Paper.

References

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