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Electron Cyclotron Resonance Plasma-assisted Reactive Pulsed Laser Deposition of Compound Films

Published online by Cambridge University Press:  31 January 2011

J. Sun ,
J. D. Wu ,
H. Ling ,
W. Shi ,
Z. F. Ying  and
F. M. Li
J. Sun
Affiliation:
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
J. D. Wu*
Affiliation:
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
H. Ling
Affiliation:
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
W. Shi
Affiliation:
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
Z. F. Ying
Affiliation:
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
F. M. Li
Affiliation:
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China
*
a)Address all correspondence to this author. J.D. Wu, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China. Fax: 86-21-65641344 e-mail: jdwu@fudan.edu.cn
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Abstract

A novel method was developed for low-temperature preparation of thin films. Pulsed laser ablation was combined with electron cyclotron resonance microwave discharge, constituting a novel hybrid film preparation method called electron cyclotron resonance plasma–assisted reactive pulsed laser deposition. We demonstrated the feasibility of the method by preparing compound films of silicon nitride, silicon dioxide, and aluminum nitride from elemental starting materials. The mechanisms responsible for efficient compound formation and film growth are discussed, together with characterization of the prepared films, analysis of the plasma composition, and comparison of the films prepared with and without assistance of the plasma. The unique features of the method make it suitable for one-step preparation of compound thin films at low temperatures.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002 , pp. 1692 - 1697
Copyright
Copyright © Materials Research Society 2002

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