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Finite element modeling of stress variation in multilayer thin-film specimens for in situ transmission electron microscopy experiments

  • H. Mei (a1), J.H. An (a2), R. Huang (a1) and P.J. Ferreira (a2)

Abstract

Multilayer thin-film materials with various thicknesses, compositions, and deposition methods for each layer typically exhibit residual stresses. In situ transmission electron microscopy (TEM) is a powerful technique that has been used to determine correlations between residual stresses and the microstructure. However, to produce electron transparent specimens for TEM, one or more layers of the film are sacrificed, thus altering the state of stresses. By conducting a stress analysis of multilayer thin-film TEM specimens, using a finite element method, we show that the film stresses can be considerably altered after TEM sample preparation. The stress state depends on the geometry and the interactions among multiple layers.

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a)Address all correspondence to this author. e-mail: reira@mail.utexas.edu

References

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1Vinci, R.P., Zielinski, E.M.Bravman, J.C.: Thermal strain and stress in copper thin films. Thin Solid Films 262, 142 1995
2Korhonen, M.A., Borgesen, P.Li, C-Y.: Mechanisms of stress-induced and electromigration-induced damage in passivated narrow metallizations on rigid substrates. MRS Bull. 17(7), 1992
3Critical Reliability Challenges for the International Technology Roadmap for Semiconductors, Reliability Technical Advisory Board (RTAB), International SEMATECH, 2003
4Li, B., Sullivan, T.D., Lee, T.C.Badami, D.: Reliability challenges for copper interconnects. Microelectron. Reliabil. 44, 365 2004
5Shi, Z.H., Onsongo, D., Rai, R., Samavedam, S.B.Banerjee, S.K.: Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs. Solid State Electron. 48, 2299 2004
6Jawarani, D., Kawasaki, H., Yeo, I-S., Rabenberg, L., Stark, J.P.Ho, P.S.: In situ transmission-electron-microscopy study of plastic deformation in passivated Al–Cu thin films. J. Appl. Phys. 82, 171 1997
7Hau-Riege, S.P.Thompson, C.V.: In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films. Appl. Phys. Lett. 76, 309 2000
8Dehm, G.Arzt, E.: In situ TEM study of dislocations in a polycrystalline Cu thin film constrained by a substrate. Appl. Phys. Lett. 77, 1126 2000
9An, J.H.Ferreira, P.J.: In situ transmission electron microscopy observations of 1.8 micron and 180 nm Cu interconnects under thermal stresses. Appl. Phys. Lett. 89, 151919 2006
10Chou, C.T., Anderson, S.C., Cockayne, D.J.H., Sizorski, A.Z.Vaughan, M.R.: Surface relaxation of strained heterostructures revealed by Bragg line splitting in LACBED patterns. Ultramicroscopy 55, 334 1994
11Houdellier, F., Roucau, C.Casaonve, M-J.: Convergent beam diffraction for strain determination at the nanoscale. Microelectron. Eng. 84, 464 2007
12Nucci, J., Kramer, S., Arzt, E.Volkert, C.A.: Local strains measured in Al lines during thermal cycling and eletromigration using convergent-beam electron diffraction. J. Mater. Res. 20, 1851 2005
13ABAQUS User’s Manual, version 6.6, Providence, RI, 2006

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