Skip to main content Accessibility help
×
Home

Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films

  • F-Y. Shiau (a1), S-L. Chen (a1), M. Loomans (a1) and Y.A. Chang (a1)

Abstract

Solid-state amorphization reaction (SSAR) between GaAs and Co thin films was investigated by transmission electron microscopy and Auger electron spectroscopy. Upon annealing of GaAs/Co thin-film couples at 260–300 °C, an amorphous phase was observed to form. Annealing at higher temperatures or for longer times led to the crystallization of the amorphous phase into a supersaturated CoAs solid solution phase with the B31 structure. Amorphization is attributed to the rapid diffusion of Co in the rather open GaAs structure. In order to consider the thermodynamic driving force for amorphization and subsequent crystallization, the phase diagram of CoGa–CoAs was investigated using DTA and metallography. The pseudobinary system was modeled thermodynamically to yield relative stability data for the various phases between GaAs and Co. These data were used to rationalize the amorphization process.

Copyright

References

Hide All
1.Schwarz, R. B. and Johnson, W. L., Phys. Rev. Lett. 51, 415 (1983).
2.Schwarz, R. B., Wong, K. L., Johnson, W. L., and Clemens, B. M., J. Non-Cryst. Solids 61–62, 129 (1984).
3.Clemens, B. M., Johnson, W. L., and Schwarz, R. B., J. Non-Cryst. Solids 61–62, 817 (1984).
4.Newcomb, S.B. and Tu, K.N., Appl. Phys. Lett. 48, 1437 (1986).
5.Barbour, J. C., Saris, F. W., Wastasi, M., and Mayer, J. W., Phys. Rev. B 32, 1363 (1985).
6.Schroder, H., Samwer, K., and Koster, U., Phys. Rev. Lett. 54, 197 (1985).
7.Van Rossum, M., Nicolet, M. A., and Johnson, W. L., Phys. Rev. B 29, 5498 (1984).
8.Guilmin, P., Guyot, P., and Marchai, G., Phys. Lett. 109A, 174 (1985).
9.Herd, S.R., Tu, K.N., and Ahn, K.Y., Appl. Phys. Lett. 42, 597 (1983).
10.Clevenger, L.A., Thompson, C.V., De Avillez, R.R., and Tu, K.N., in Chemistry and Defects in Semiconductor Heterostructures, edited by Kawabe, M., Sands, T.D., Weber, E.R., and Williams, R.S. (Mater. Res. Soc. Symp. Proc. 148, Pittsburgh, PA, 1989), p. 77.
11.Matan, M., Appl. Phys. Lett. 49, 257 (1986).
12.Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).
13.Lur, W. and Chen, L.J., Appl. Phys. Lett. 54, 1217 (1989).
14.Cheng, J.Y. and Chen, L.J., Appl. Phys. Lett. 57, 612 (1990).
15.Uskov, V.A., Fedotov, A.B., Eroteeva, E.A., Rodionov, A.I., and Dzhumakulov, D. T., Izv. Akad. Nauk SSSR, Neorgan. Mater. 23, 186 (1987).
16.Sands, T., Chang, C.C., Kaplan, A.S., Keramidas, V.G., Kirshnan, K.M., and Washburn, J., Appl. Phys. Lett. 50, 1346 (1987).
17.Caron-Popowich, R., Washburn, J., Sands, T., and Kaplan, A. S., J. Appl. Phys. 64, 4909 (1988).
18.Shiau, F. Y. and Chang, Y. A., Appl. Phys. Lett. 55, 1510 (1989).
19.Shiau, F. Y., Ph. D. Thesis, University of Wisconsin, Madison, WI (1990).
20.Shiau, F. Y. and Chang, Y. A., in Thin-Film Structures and Phase Stability, edited by Clemens, B. M. and Johnson, W. I. (Mater. Res. Soc. Symp. Proc. 187, Pittsburgh, PA, 1990), p. 89.
21.Chen, S-W., Jan, C-H., Lin, J-C., and Chang, Y. A., Metall. Trans. 20A, 2247 (1989).
22.Palmström, C.J., Chang, C.C., Yu, A., Galvin, G.J., and Mayer, J.W., J. Appl. Phys. 62, 3755 (1987).
23.Genut, M. and Eizenberg, M., J. Appl. Phys. 66, 5456 (1989).
24.Shiau, F. Y. and Chang, Y. A., in Chemistry and Defects in Semiconductor Heterostructures, edited by Kawabe, M., Sands, T. D., Weber, E. R., and Williams, R. S. (Mater. Res. Soc. Symp. Proc. 148, Pittsburgh, PA, 1989), p. 29.
25.Shiau, F. Y., Chang, Y. A., and Chen, L. J., J. Electron. Mater. 17, 433 (1988).
26.Shiau, F.Y., Zuo, Y., Lin, J. C., Zheng, X.Y., and Chang, Y.A., Z. Metalik. 80, 544 (1989).
27.Hauser, J. J., Phys. Rev. B 32, 2887 (1985).
28.Chuang, Y-Y., Schmid, R., and Chang, Y.A., Metall. Trans. 15A, 1921 (1984).
29.Kulikov, G. S. and Nikulitsa, I. N., Sov. Phys.-Solid State 14, 2335 (1973).
30.Plafrey, H. D., Brown, M., and Willoughby, A.F.W., J. Electrochem. Soc. 128, 2224 (1981); J. Electron. Mater. 12, 863 (1983).
31.Lin, J-C., Schulz, K.J., Hsieh, K-C., and Chang, Y.A., in High Temperature Materials Chemistry TV, edited by Munir, Z. A., Cubiccioti, D., and Tagawa, H. (Electrochem. Soc, Inc., Pennington, NJ, 1988), p. 476.
32.Lin, J-C., Schulz, K.J., Hsieh, K-C., and Chang, Y.A., J. Electrochem. Soc. 136, 3006 (1989).
33.Schultz, A. E., Ph. D. Thesis, University of Wisconsin, Madison, WI (1988).
34.Hultgren, R.R., Desai, P.D., Hawkins, D.T., Gleiser, M., Kelley, K.K., and Wagman, D. D., Selected Values of the Thermodynamic Properties of the Elements (American Soc. for Metals, Metals Park, OH44073, 1973).
35.Kochnev, M. I., Doklady Akad. Nauk SSSR 70, 433 (1950).
36.Mikula, A., Chang, Y. A., and Neumann, J. P., Trans. Jpn. Inst. Metals 19, 307 (1978).
37.Cahn, J.W., J. Am. Ceram. Soc. 52, 118 (1969).
38.Saunders, N. and Miodownik, A. P., J. Mater. Res. 1, 38 (1986).
39.Clemens, B. M. and Sinclair, R., MRS Bulletin XV (2), 19 (1990).
40.Gachon, J. C. and Hertz, J., CALPHAD 7, 1 (1983).
41.Jan, C-H., Swenson, D., Zheng, X-Y., Lin, J-C., and Chang, Y.A., Acta Metall, et Mater. 39, 303 (1991).
42.Jan, C-H., Swenson, D., and Chang, Y. A., in Fundamentals and Applications of Ternary Diffusion, edited by Purdy, G. R. (Pergamon Press, New York, 1990), p. 127.
43.Lur, W. and Chen, L.J., Appl. Phys. Lett. 54, 1217 (1989).
44.Zhang, M-X., Chang, Y. A., and Marcotte, V. C., J. Electrochem. Soc. 137, 3158 (1990).

Related content

Powered by UNSILO

Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films

  • F-Y. Shiau (a1), S-L. Chen (a1), M. Loomans (a1) and Y.A. Chang (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.