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Growth and characterization of ultrathin cobalt silicide films on Si(211) and (311)

Published online by Cambridge University Press:  31 January 2011

Julia M. Phillips ,
J.L. Batstone ,
J.C. Hensel ,
Irene Yu  and
M. Cerullo
Julia M. Phillips
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
J.L. Batstone
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
J.C. Hensel
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
Irene Yu
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
M. Cerullo
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have studied the structural and electrical properties of ultrathin cobalt silicide films deposited on Si(211) and (311) and annealed at a variety of temperatures. Transmission electron microscopy reveals two regimes of silicide growth. If more than 10 Å of Co is deposited, textured CoSi forms at low temperatures, which transforms to two epitaxial orientations of CoSi2 at about 500°C. If less than 10 Å of Co is deposited, only one epitaxial CoSi2 orientation is observed, which occurs in discontinuous islands or lines. The resistivities of the thinnest films reflect the degree of continuity of the silicide layers. In thicker films, where disorder is the major factor, the resistivity for intermediate annealing temperatures (∼500°C) depends dramatically on the orientation of the Si substrate, being an order of magnitude lower for Si(311) and (211) than for (111). The differences between these observations and those made on films grown under the same conditions on Si(111) can be understood by noting both the greater tendency of the film to form intermediate phases which are epitaxial on the high symmetry Si(111) surface and the faceting of the CoSi2-Si(311) and (211) interfaces.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 5 , May 1990 , pp. 1032 - 1041
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Phillips, J. M., Batstone, J. L., Hensel, J. C., and Cerullo, M., Appl. Phys. Lett. 51, 23 (1987).Google Scholar
2Phillips, J.M., Batstone, J.L., Hensel, J.C., Cerullo, M., and Unterwald, F.C., J. Mater. Res. 4 (1), 144 (1989).CrossRefGoogle Scholar
3Gibson, J.M., Batstone, J.L., Tung, R.T., and Unterwald, F.C., Phys. Rev. Lett. 60, 1158 (1988).CrossRefGoogle Scholar
4Gibson, J. M., McDonald, M. L., and Unterwald, F. C., Phys. Rev. Lett. 55, 1765 (1985).CrossRefGoogle Scholar
5Kroemer, H. (Proc. Mater. Res. Soc. Symp.) (Materials Research Society, Pittsburgh, PA, 1986), Vol. 67, p. 3 and references therein.Google Scholar
6Ishizaka, A., Nakagawa, K., and Shiraki, Y., Collected Papers MBE-CST-2, 1982, Tokyo (Jpn. Soc. Appl. Phys., Tokyo, 1982), p.183Google Scholar
7Gibson, J. M., Bean, J. C., Poate, J. M., and Tung, R.T., Appl. Phys. Lett. 41, 818 (1982)CrossRefGoogle Scholar
8Batstone, J.L., Daykin, A. C., Phillips, J. M., and Hensel, J. C., Proc. of the Oxford Conf. on the Microscopy of Semiconductor Materip. als, 10–13 April 1989 (in press).Google Scholar