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Growth of a-axis-oriented HgBa2CaCu2Oxthin films by rapid quenching

Published online by Cambridge University Press:  31 January 2011

S. H. Yun
Affiliation:
Department of Physics, Materials Physics, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
U. O. Karlsson
Affiliation:
Department of Physics, Materials Physics, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
B. J. Jönsson
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
K. V. Rao
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
L. D. Madsen
Affiliation:
Department of Physics, Linköping University, SE-58183 Linköping, Sweden
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Abstract

High-quality a-axis-oriented HgBa2CaCu2Ox superconducting thin films have been grown on (100) LaAlO3 substrates using a modified conventional method that contains a short annealing time of 5 min, rapid-quenching process, and an alternative encapsulated approach. We found that the preferred orientations of HgBa2CaCu2Ox thin films can be controlled by rapid quenching at specific temperatures: 800, 700, 600, and 500 °C. The films rapidly quenched in water from 700 °C during a cooling cycle showed predominantly a-axis orientation perpendicular to the film surface. Phase was confirmed by x-ray diffraction pole figures. The a-axis films exhibited a zero-resistance transition temperature >120 K, which is comparable to epitaxial c-axis-oriented films.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Eom, C.B., Marshall, A.F., Laderman, S.S., Jacowitz, R.D., and Gebelle, T.H., Science 249, 1549 (1990).CrossRefGoogle Scholar
2.Inam, A., Rogers, C.T., Ramesh, R., Remschnig, K., Farrow, L., Hart, D., Venkatesan, T., and Wilkens, B., Appl. Phys. Lett. 57, 2484 (1990).CrossRefGoogle Scholar
3.Mahajan, S., Wen, J.G., Ito, W., Yoshida, Y., Kubota, N., Liu, C-J., and Morishita, T., Appl. Phys. Lett. 65, 3129 (1994).CrossRefGoogle Scholar
4.Gasser, C., Moriwaki, Y., Sugano, T., Nakanishi, K., Wu, X-J., Adachi, S., and Tanabe, K., Appl. Phys. Lett. 72, 972 (1998).CrossRefGoogle Scholar
5.Yun, S.H. and Wu, J.Z., Appl. Phys. Lett. 68, 862 (1996).CrossRefGoogle Scholar
6.Tsuei, C.C., Gupta, A., Trafas, G., and Mitzi, D., Science 263, 1259 (1994).CrossRefGoogle Scholar
7.Foong, F., Bedard, B., Xu, Q.L., and Liou, S.H., Appl Phys. Lett. 68, 1153 (1996).CrossRefGoogle Scholar
8.Farrell, D.E., Chandrasekhar, B.S., DeGuire, M.R., Fang, M.M., Kogan, V.G., Clem, J.R., and Finnemore, D.K., Phys. Rev. B 36, 4025 (1987).CrossRefGoogle Scholar