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High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

Published online by Cambridge University Press:  05 July 2012

M. Cutroneo ,
P. Musumeci ,
M. Zimbone ,
L. Torrisi ,
F. La Via ,
D. Margarone ,
A. Velyhan ,
J. Ullschmied  and
L. Calcagno
M. Cutroneo
Affiliation:
Physics Department, Messina, V.le F. Stagno D’Alcontres 31, 98166 S. Agata (ME), Italy
P. Musumeci
Affiliation:
Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
M. Zimbone
Affiliation:
Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
L. Torrisi
Affiliation:
Physics Department, Messina, V.le F. Stagno D’Alcontres 31, 98166 S. Agata (ME), Italy
F. La Via*
Affiliation:
Istituto Microelettronica Microsistemi-CNR, Stradale Primosole, Catania, Italy
D. Margarone
Affiliation:
ELI Beamlines Project, Institute of Physics of the ASCR, Na Slovance 2, 18221, Prague, Czech Republic
A. Velyhan
Affiliation:
ELI Beamlines Project, Institute of Physics of the ASCR, Na Slovance 2, 18221, Prague, Czech Republic
J. Ullschmied
Affiliation:
Institute of Plasma Physics, AS CR, v.v.i., Za Slovankou 3, Prague 8, Czech Republic
L. Calcagno*
Affiliation:
Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
*
b)Address all correspondence to this author. e-mail: lucia.calcagno@ct.infn.it
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Abstract

Silicon carbide (SiC) detectors were used to analyze the multi-MeV ions of the plasma produced by irradiation of various targets with a 300-ps laser at intensity of 1016 W/cm2. The SiC detectors were realized by fabricating Schottky diodes on 80 μm epitaxial layer. The low dopant concentration and defect density of the epilayer allowed the realization of good performance detectors. The use of SiC detectors ensures the cutting of the visible and soft ultraviolet radiation emitted from plasma enhancing the sensitivity to very fast ions. The time-of-flight spectra obtained by irradiating different targets show a peak associated to protons and various peaks relative to different charge states of ions. Processing of the experimental data allows to estimate the energies of the protons and of the different ions emitted from laser-induced plasma. The SiC detector results are compared with the ones obtained by Ion Collector and a Thomson Parabola spectrometer.

Keywords

silicon carbideion detectorshigh power laserphotonsenergetic ions
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 87 - 93
Copyright
Copyright © Materials Research Society 2012

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