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High photoresponsivity and light-induced carrier conversion in RGO/TSCuPc hybrid phototransistors

Published online by Cambridge University Press:  18 October 2018

Tanusri Pal ,
Daeha Joung ,
Surajit Ghosh ,
Anindarupa Chunder ,
Lei Zhai  and
Saiful I. Khondaker Open the ORCID record for Saiful I. Khondaker [Opens in a new window]
Tanusri Pal*
Affiliation:
Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA
Daeha Joung
Affiliation:
Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Physics, University of Central Florida, Orlando, Florida 32826, USA
Surajit Ghosh
Affiliation:
Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA
Anindarupa Chunder
Affiliation:
Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Chemistry, University of Central Florida, Orlando, Florida 32826, USA
Lei Zhai
Affiliation:
Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Chemistry, University of Central Florida, Orlando, Florida 32826, USA
Saiful I. Khondaker*
Affiliation:
Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Physics, University of Central Florida, Orlando, Florida 32826, USA
*
a)Address all correspondence to these authors. e-mail: tanusri.pal@gmail.com
b)e-mail: saiful@ucf.edu
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Abstract

Reduced graphene oxide (RGO) and its composites have a great potential for their applications in optoelectronic devices. In particular, small molecules can be used for tailoring optoelectronic properties of RGO. Here, we report the fabrication of a hybrid RGO/tetrasulfonate salt of the copper phthalocyanine (RGO/TSCuPc) nanocomposite phototransistor. The device shows p-type transistor behavior in the dark which changes to ambipolar behavior at the lower light intensity, and then shows a complete n-type property at the higher light intensity. The photoresponsivity of the device can be tuned by gate voltages, and the best photoresponsivity is recorded to be as high as ∼4.6 A/W for positive gate voltage and ∼6.3 A/W with a negative sign for negative gate voltage under solar light irradiation. The observations suggest that the photogenerated free electrons of TSCuPc molecules can be injected efficiently onto RGO sheets, resulting in increases in electron conduction and hole quenching.

Keywords

nanostructurecompositeelectrical propertiesoptoelectronicphotoconductivity
Type
Article
Information
Journal of Materials Research , Volume 33 , Issue 23 , 14 December 2018 , pp. 3999 - 4006
Copyright
Copyright © Materials Research Society 2018 

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Footnotes

c)

These authors contributed equally to this work.

d)

Present address: Department of Physics, Midnapore College, Midnapore 721101, India.

e)

Present address: Department of Physics and Technophysics, Vidyasagar University, Midnapore 721102, India.

References

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