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Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications

  • Deepak Prasai (a1), Wilfred John (a1), Leonhard Weixelbaum (a1), Olaf Krüger (a1), Günter Wagner (a2), Peter Sperfeld (a3), Stefan Nowy (a3), Dirk Friedrich (a3), Stefan Winter (a3) and Tilman Weiss (a4)...

Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.

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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
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