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Highly textured Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  01 June 2006

S.K. Dey ,
W. Cao ,
S. Bhaskar  and
J. Li
S.K. Dey*
Affiliation:
Department of Chemical and Materials Engineering, & Electrical Engineering, Ira A. Fulton School of Engineering, Arizona State University, Tempe, Arizona 85287-6006
W. Cao
Affiliation:
Department of Chemical and Materials Engineering, & Electrical Engineering, Ira A. Fulton School of Engineering, Arizona State University, Tempe, Arizona 85287-6006
S. Bhaskar
Affiliation:
Department of Chemical and Materials Engineering, & Electrical Engineering, Ira A. Fulton School of Engineering, Arizona State University, Tempe, Arizona 85287-6006
J. Li
Affiliation:
Department of Chemical and Materials Engineering, & Electrical Engineering, Ira A. Fulton School of Engineering, Arizona State University, Tempe, Arizona 85287-6006
*
a) Address all correspondence to this author. e-mail: Sandwip.dey@asu.edu
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Abstract

Highly (111) textured Pb(Zr0.3Ti0.7)O3 (PZT 30/70) films were deposited on (0001) GaN/sapphire substrates using liquid-source metalorganic chemical vapor deposition (MOCVD) technique at 520 °C and 80 nm/min. The crystallinity of as-deposited PZT films and the structure of PZT/GaN interface were evaluated by x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), respectively. Mitigated by geometric epitaxy and strain energy minimization, the orientation relationships of PZT on epi-GaN, determined using x-ray pole figure and selected area diffraction pattern, were as follows: out-of-plane alignment of [111] PZT//[0001] GaN, and orthogonal in-plane alignments of [112] PZT//[1100] GaN (zone axes) and [110] PZT//[1120] GaN. The nanochemistry of the PZT (150nm)/GaN interface, studied using analytical TEM, indicated a chemically sharp interface with interdiffusion limited to a region below 5 nm. The properties of as-deposited PZT on GaN by MOCVD are briefly compared with PZT by sol-gel processing, radio-frequency sputtering, and pulsed laser deposition.

Keywords

Chemical vapor disposition (CVD)FerroelectricTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 6 , June 2006 , pp. 1526 - 1531
Copyright
Copyright © Materials Research Society 2006

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