The reaction of tetraethoxysilane (TEOS) and the subsequent deposition of SiOx on the basal plane and edges of highly oriented pyrolytic graphite (HOPG) were studied. Interfacial bonding and surface morphologies resulting from different reaction conditions were probed using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), temperature programmed desorption (TPD), and high resolution electron energy loss spectroscopy (HREELS). The initial reaction of TEOS was found to occur at surface defects. STM images indicated that SiCx films do not grow layer-by-layer, confirming earlier indirect observations to that effect.
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