Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-29T10:29:30.684Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Microstructure and Joint Strength of Sn–3.5Ag–X (X = Cu, In, Ni) Solder Joint

Published online by Cambridge University Press:  31 January 2011

Won Kyoung Choi ,
Jong Hoon Kim ,
Sang Won Jeong  and
Hyuck Mo Lee
Won Kyoung Choi
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusung-Dong 373–1, Yusung-Gu, Taejon, Korea 305–701
Jong Hoon Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusung-Dong 373–1, Yusung-Gu, Taejon, Korea 305–701
Sang Won Jeong
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusung-Dong 373–1, Yusung-Gu, Taejon, Korea 305–701
Hyuck Mo Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusung-Dong 373–1, Yusung-Gu, Taejon, Korea 305–701
Get access

Abstract

Interfacial phase and microstructure, solder hardness, and joint strength of Sn–3.5Ag–X (X = Cu, In, Ni; compositions are all in wt% unless specified otherwise) solder alloys were investigated. Considering the melting behavior and the mechanical properties, five compositions of Sn–3.5Ag–X solder alloys were selected. To examine the joint characteristics, they were soldered on under bump metallurgy isothermally at 250 °C for 60 s. Aging and thermal cycling (T/C) were also performed on the solder joint. The interfacial microstructure of the joint was observed by scanning electron microscopy. X-ray diffraction and energy dispersive x-ray analyses were made toidentify the type of solder phase and to measure compositions. Excessive growth of an interfacial intermetallic layer in the Sn–3.5Ag–6.5 In solder joint led to a brittle fracture. In the other four solder joints, ductile fractures occurred through the solder region and the solder hardness was closely related with the joint strength.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 43 - 51
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Huang, B.L. and Lee, N.C., in Proceedings of International Microelectronics and Packaging Society ’99, Chicago, IL (International Microelectronics and Packaging Society, Washington, DC, 1999).Google Scholar
Bradley, E., Review of No-Lead Solder Issue, NEMI meeting (NEMI-National Electronics Manufacturing Initiative, Inc., Herndon, VA), Anaheim, CA, Feb. 23 (1999).Google Scholar
Lead-Free Solder Project NCMS Report 0401RE96 (National Center for Manufacturing Sciences, Ann Arbor, MI, Aug. 1997).Google Scholar
Lee, N.C., Chip Scale Review, March/April (2000), downloaded from www.pb-free.com.Google Scholar
IPC Road Map for Lead-Free Electronics Assemblies 2nd Draft, Nov (1999), downloaded from www.leadfree.org.Google Scholar
Choi, W.K. and Lee, H.M., J. Electron. Mater. 28, 1251 (1999).Google Scholar
Korhonen, T.M. and Kivilahti, J.K., J. Electron. Mater. 27, 149 (1998).Google Scholar
McCormack, M., Kammlott, G.W., Chen, H.S., and Jin, S., Appl. Phys. Lett. 65, 1233 (1994).Google Scholar
Kattner, U.R. and Boettinger, W.J., J. Electron. Mater. 23, 603 (1994).Google Scholar
McCormack, M., Jin, S., Kammlott, G.W., and Chen, H.S., Appl. Phys. Lett. 63, 15 (1993).Google Scholar
Moon, K.W., Boettinger, W.J., Kattner, U.R., Biancaniello, F.S., and Handwerker, C.A., J. Electron. Mater. 29, 1122 (2000).CrossRefGoogle Scholar
Ohnuma, I., Miyashita, M., Anzai, K., Liu, X.J., Ohtani, H., and Ishida, K., J. Electron. Mater. 29, 1137 (2000).Google Scholar
Kariya, Y. and Otsuka, M., J. Electron. Mater. 27, 1229 (1998).Google Scholar
Yoon, S.W., Park, C.J., Hong, S.H., Moon, J.T., Park, I.S., and Chun, H.S., J. Electron. Mater. 29, 1233 (2000).Google Scholar
Sundman, B., Jansson, B., and Andersson, J.O., CALPHAD 9, 153 (1985).Google Scholar
Hayes, F.H., Lukas, H.L., Effenberg, G., and Petzow, G., Z. Metallkd. 77, 749 (1986).Google Scholar
Shim, J-H., unpublished work, Seoul National University, Seoul, Korea (1997).Google Scholar
Ghosh, G., unpublished work, Northwestern University, Evanston, IL (1998).Google Scholar
Oh, C-S., Shim, J-H., Lee, B-J., and Lee, D.N., J. Alloys Compd. 238, 155 (1996).Google Scholar
Shim, J-H., Oh, C-S., Lee, B-J., and Lee, D.N., Z. Metallkd. 87, 205 (1996).Google Scholar
Lee, B-J., Oh, C-S., and Shim, J-H., J. Electron. Mater. 25, 983 (1996).Google Scholar
Ghosh, G., Metall. Mater. Trans. 30A, 1481 (1999).Google Scholar
Choi, W.K., Yoon, S.W., and Lee, H.M., Mater. Trans. JIM 42, 783 (2001).Google Scholar
Park, J.Y., Ha, J.S., Kang, C.S., Shin, K.S., Kim, M.H., and Jeong, J.P., J. Electron. Mater. 29, 1145 (2000).Google Scholar
Korhonen, T.M., Su, P., Hong, S.J., Korhonen, M.A., and Li, C.Y., J. Electron. Mater. 29, 1194 (2000).Google Scholar
Frear, D.R., IEEE Trans. Compon., Hybrids, Manuf. Technol. 13, 718 (1990).Google Scholar
Yang, W., Messler, R.W. Jr., and Felton, L.E., J. Electron. Mater. 23, 765 (1994).Google Scholar
Choi, W.K. and Lee, H.M., J. Electron. Mater. 29, 1207 (2000).CrossRefGoogle Scholar
Porter, D.A. and Easterling, K.E., Phase Transformations in Metals and Alloys, 2nd ed. (Chapman and Hall, London, United Kingdom, 1992).Google Scholar
Frear, D.R., Burchett, S.N., Morgan, H.S., and Lau, J.H., The Mechanics of Solder Alloy Interconnects (Van Nostrand Reinhold, NY, 1994).Google Scholar
Smithells, C.J., Metals Reference Book, 7th ed. (Butterworths, London, United Kingdom, 1976), Vol. 2.Google Scholar
Lau, J.H., Solder Joint Reliability (Van Nostrand Reinhold, NY, 1991).Google Scholar
Frear, D.R. and Vianco, P.T., Metall. Mater. Trans. 25A, 1509 (1994).Google Scholar
Coyle, R.J., Solan, P.P., Serafino, A.J., and Gahr, S.A., in Proceedings of 50th Electronic Component and Technology Conference, Las Vegas, NV, May 21–24 (IEEE, Piscataway, NJ, 2000).Google Scholar