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  • Paul C. McIntyre (a1), Volker Schmidt (a2), Tom Picraux (a3), Nathaniel Quitoriano (a4), Heike Riel (a5), Claes Thelander (a6) and Carl Thompson (a7)...
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1.Schmidt, V., Wittemann, J.V., Senz, S., and Gösele, U.: Silicon nanowires: A review on aspects of their growth and their electrical properties. Adv. Mater. 21, 2681 (2009).
2.Hiruma, K., Yazawa, M., Katsuyama, T., Ogawa, K., Haraguchi, K., Koguchi, M., and Kakibayashi, H.: Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77, 447 (1995).
3.Westwater, J., Gosain, D.P., Tomiya, S., Usui, S., and Ruda, H.: Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction. J. Vac. Sci. Technol. B 15, 554 (1997).
4.Morales, A.M. and Lieber, C.M.: A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279, 208 (1998).
5.Wagner, R.S. and Ellis, W.C.: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 (1964).
6.Ryu, S. and Cai, W.: Molecular dynamics simulations of gold-catalyzed growth of silicon bulk crystals and nanowires. J. Mater. Res. 26, 17 (2011).
7.Wallentin, J. and Borgström, M.T.: Doping of semiconductor nanowires. J. Mater. Res. 26, 17 (2011).
8.Calarco, R., Stoica, T., Brandt, O., and Geelhaar, L.: Surface-induced effects in GaN nanowires. J. Mater. Res. 26, 17 (2011).
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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