Hostname: page-component-7f64f4797f-m2b9p Total loading time: 0 Render date: 2025-11-04T09:09:45.291Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion beam modification of fullerene films and their frictional behavior

Published online by Cambridge University Press:  03 March 2011

Rabi S. Bhattacharya ,
A.K. Rai ,
J.S. Zabinski  and
Neil T. McDevitt
Rabi S. Bhattacharya
Affiliation:
UES, Inc., 4401 Dayton-Xenia Road, Dayton, Ohio 45432-1894
A.K. Rai
Affiliation:
UES, Inc., 4401 Dayton-Xenia Road, Dayton, Ohio 45432-1894
J.S. Zabinski
Affiliation:
Materials Directorate, Wright Laboratory, Wright Patterson Air Force Base, Dayton, Ohio 45433-6533
Neil T. McDevitt
Affiliation:
Ramspec Research, 4399 East Mohave Drive, Dayton, Ohio 45431
Get access

Abstract

C60 films were deposited on a variety of substrates by thermal evaporation. The presence of C60 in the films was confirmed by Transmission Electron Microscopy and Raman spectroscopic analysis. The C60 films exhibited an average friction coefficient of 0.4–0.5. The films were irradiated with 2 MeV Ag+ and B+ ions at various doses. High energy ion bombardment created damage that resulted in partly crystalline to amorphous films, dependent on the mass and dose of ions. The amorphous films showed a friction coefficient of <0.1. Partly crystalline films showed a friction coefficient at the same level as that of unirradiated films.

Information

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 7 , July 1994 , pp. 1615 - 1618
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Kratschmer, W., Lamb, L. D., Fostiropoulos, K., and Huffman, D. R., Nature 347, 354 (1990).Google Scholar
2Kroto, H. W., Heath, J. R., O'Brien, S. C., Curl, R. F., and Smalley, R. E., Nature 318, 162 (1985).Google Scholar
3Meijer, G. and Bethune, D. S., J. Chem. Phys. 93, 7800 (1990).Google Scholar
4Huffman, D. R., Phys. Today, November, 22 (1991).CrossRefGoogle Scholar
5Blau, P. J. and Haberlin, C. E., Thin Solid Films 219, 129 (1992).Google Scholar
6Bhattacharya, R. S., Rai, A. K., and Erdemir, A., Nucl. Instrum. Methods, Phys. Res. B 59/60, 788 (1991).Google Scholar
7Bhattacharya, R. S., Rai, A. K., McCormick, A. W., and Erdemir, A., ASME/STLE Conference, San Diego, CA, Oct. 19–21 (1992, in press).Google Scholar
8Meilunas, R. J. and Chang, R. P. H., Appl. Phys. Lett. 59, 3461 (1991).Google Scholar
9Chase, B., Herron, N., and Holler, E., J. Phys. Chem. 96, 4262 (1992).Google Scholar
10Wu, R. L. C., Surf. Coat. Technol. 51, 258 (1992).Google Scholar
11Liu, W. M., Bello, I., Feng, X., Huang, L. J., Fuguang, Q., Zhenyu, Y., and Zhizhang, R., J. Appl. Phys. 70, 5623 (1991).Google Scholar
12Kalish, R., Samoiloff, A., Hoffman, A., Uzan-Saguy, C., McCulloch, D., and Prawer, S., Phys. Rev. 48, 18235 (1993).Google Scholar
13Wu, R. L. C., Miyoshi, K., Miyake, S., Jackson, H. E., and Choo, A. G., Diamond Films Technol. 3, 17 (1993).Google Scholar
14Biersack, J. P. and Haggmark, L. J., Nucl. Instrum. Methods 174, 257 (1980).Google Scholar
15Bhattacharya, R. S., Wu, R. L. C., and Yust, C. S., Nucl. Instrum. Methods, Phys. Res. B 59/60, 1383 (1991).Google Scholar