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Kinetics of silicon nitride crystallization in N+-implanted silicon

Published online by Cambridge University Press:  31 January 2011

V. S. Kaushik ,
A. K. Datye ,
D. L. Kendall ,
B. Martinez-Tovar ,
D. S. Simons  and
D. R. Myers
V. S. Kaushik
Affiliation:
Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131
A. K. Datye
Affiliation:
Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131
D. L. Kendall
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
B. Martinez-Tovar
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131
D. S. Simons
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
D. R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 394 - 398
Copyright
Copyright © Materials Research Society 1989

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References

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