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Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2

  • Rudresh Ghosh (a1), Joon-Seok Kim (a1), Anupam Roy (a1), Harry Chou (a1), Mary Vu (a1), Sanjay K. Banerjee (a1) and Deji Akinwande (a1)...
Abstract
Abstract

Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.

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a) Address all correspondence to this author. e-mail: rudresh@utexas.edu
References
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1. Novoselov K.S., Geim A.K., Morozov S.V., Jiang D., Zhang Y., Dubonos S.V., Grigorieva I.V., and Firsov A.A.: Electric field effect in atomically thin carbon films. Science 306, 666669 (2004).
2. Chhowalla M., Shin H.S., Eda G., Li L-J., Loh K.P., and Zhang H.: The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263275 (2013).
3. Wang Q.H., Kalantar-zadeh K., Kis A., Coleman J.N., and Strano M.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699712 (2012).
4. Radisavljevic B., Radenovic A., Brivio J., Giacometti V., and Kis A.: Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147150 (2011).
5. Das S., Chen H.Y., Penumatcha A.V., and Appenzeller J.: High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100105 (2013).
6. Akinwande D., Petrone N., and Hone J.: Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5737 (2015).
7. Chuang S., Battaglia C., Azcatl A., McDonnell S., Kang J.S., Yin X., Tosun M., Kapadia R., Fang H., Wallace R.M., and Javey A.: MoS2 p-type transistors and diodes enabled by high work function MoOx contacts. Nano Lett. 14, 13371342 (2014).
8. Kiriya D., Tosun M., Zhao P., Kang J.S., and Javey A.: Air-stable surface charge transfer doping of MoS2 by benzyl viologen. J. Am. Chem. Soc. 136, 78537856 (2014).
9. Chang H., Yang S., Lee J., Tao L., Hwang W., Jena D., Lu N., and Akinwande D.: High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power. ACS Nano 7, 54465452 (2013).
10. Sanne A., Ghosh R., Rai A., Movva H.C.P., Sharma A., Rao R., Mathew L., and Banerjee S.K.: Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates. Appl. Phys. Lett. 106, 062101 (2015).
11. Sanne A., Ghosh R., Rai A., Nagavalli Yogeesh M., Shin S.H., Sharma A., Jarvis K., Mathew L., Rao R., Akinwande D., and Banerjee S.K.: Radio frequency transistors and circuits based on CVD MoS2 . Nano Lett. 15, 50395045 (2015).
12. Liu Y., Ghosh R., Wu D., Ismach A., Ruoff R., and Lai K.: Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique. Nano Lett. 14, 46824686 (2014).
13. Roy A., Guchhait S., Sonde S., Dey R., Pramanik T., Rai A., Hema C.P., Colombo L., and Banerjee S.K.: Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Appl. Phys. Lett. 102, 163118 (2013).
14. Li H., Zhang Q., Yap C.C.R., Tay B.K., Edwin T.H.T., Olivier A., and Baillargeat D.: From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 22, 13851390 (2012).
15. Tongay S., Zhou J., Ataca C., Lo K., Matthews T.S., Li J., Grossman J.C., and Wu J.: Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2 . Nano Lett. 12, 55765580 (2012).
16. Mak K.F., He K., Lee C., Lee G.H., Hone J., Heinz T.F., and Shan J.: Tightly bound trions in monolayer MoS2 . Nat. Mater. 12, 207211 (2012).
17. Su S-H., Hsu W-T., Hsu C-L., Chen C-H., Chiu M-H., Lin Y-C., Chang W-H., Suenaga K., He J-H., and Li L-J.: Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys. Front. Energy Res. 2, 27 (2014).
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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