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Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2

  • Rudresh Ghosh (a1), Joon-Seok Kim (a1), Anupam Roy (a1), Harry Chou (a1), Mary Vu (a1), Sanjay K. Banerjee (a1) and Deji Akinwande (a1)...

Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.

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1. NovoselovK.S., GeimA.K., MorozovS.V., JiangD., ZhangY., DubonosS.V., GrigorievaI.V., and FirsovA.A.: Electric field effect in atomically thin carbon films. Science 306, 666669 (2004).
2. ChhowallaM., ShinH.S., EdaG., LiL-J., LohK.P., and ZhangH.: The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263275 (2013).
3. WangQ.H., Kalantar-zadehK., KisA., ColemanJ.N., and StranoM.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699712 (2012).
4. RadisavljevicB., RadenovicA., BrivioJ., GiacomettiV., and KisA.: Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147150 (2011).
5. DasS., ChenH.Y., PenumatchaA.V., and AppenzellerJ.: High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100105 (2013).
6. AkinwandeD., PetroneN., and HoneJ.: Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5737 (2015).
7. ChuangS., BattagliaC., AzcatlA., McDonnellS., KangJ.S., YinX., TosunM., KapadiaR., FangH., WallaceR.M., and JaveyA.: MoS2 p-type transistors and diodes enabled by high work function MoOx contacts. Nano Lett. 14, 13371342 (2014).
8. KiriyaD., TosunM., ZhaoP., KangJ.S., and JaveyA.: Air-stable surface charge transfer doping of MoS2 by benzyl viologen. J. Am. Chem. Soc. 136, 78537856 (2014).
9. ChangH., YangS., LeeJ., TaoL., HwangW., JenaD., LuN., and AkinwandeD.: High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power. ACS Nano 7, 54465452 (2013).
10. SanneA., GhoshR., RaiA., MovvaH.C.P., SharmaA., RaoR., MathewL., and BanerjeeS.K.: Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates. Appl. Phys. Lett. 106, 062101 (2015).
11. SanneA., GhoshR., RaiA., Nagavalli YogeeshM., ShinS.H., SharmaA., JarvisK., MathewL., RaoR., AkinwandeD., and BanerjeeS.K.: Radio frequency transistors and circuits based on CVD MoS2 . Nano Lett. 15, 50395045 (2015).
12. LiuY., GhoshR., WuD., IsmachA., RuoffR., and LaiK.: Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique. Nano Lett. 14, 46824686 (2014).
13. RoyA., GuchhaitS., SondeS., DeyR., PramanikT., RaiA., HemaC.P., ColomboL., and BanerjeeS.K.: Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Appl. Phys. Lett. 102, 163118 (2013).
14. LiH., ZhangQ., YapC.C.R., TayB.K., EdwinT.H.T., OlivierA., and BaillargeatD.: From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 22, 13851390 (2012).
15. TongayS., ZhouJ., AtacaC., LoK., MatthewsT.S., LiJ., GrossmanJ.C., and WuJ.: Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2 . Nano Lett. 12, 55765580 (2012).
16. MakK.F., HeK., LeeC., LeeG.H., HoneJ., HeinzT.F., and ShanJ.: Tightly bound trions in monolayer MoS2 . Nat. Mater. 12, 207211 (2012).
17. SuS-H., HsuW-T., HsuC-L., ChenC-H., ChiuM-H., LinY-C., ChangW-H., SuenagaK., HeJ-H., and LiL-J.: Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys. Front. Energy Res. 2, 27 (2014).
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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