Skip to main content
×
Home
    • Aa
    • Aa
  • Get access
    Check if you have access via personal or institutional login
  • Cited by 50
  • Cited by
    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Bougher, Thomas L. Yates, Luke Lo, Chien-Fong Johnson, Wayne Graham, Samuel and Cola, Baratunde A. 2016. Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation. Nanoscale and Microscale Thermophysical Engineering, Vol. 20, Issue. 1, p. 22.


    Dai, Yiquan Li, Shuiming Gao, Hongwei Wang, Weihui Sun, Qian Peng, Qing Gui, Chengqun Qian, Zhengfang and Liu, Sheng 2016. Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling. Journal of Materials Science: Materials in Electronics, Vol. 27, Issue. 2, p. 2004.


    Yalamarthy, Ananth Saran and Senesky, Debbie G 2016. Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors. Semiconductor Science and Technology, Vol. 31, Issue. 3, p. 035024.


    Gao, B. and Kakimoto, K. 2015. Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals. Journal of Applied Physics, Vol. 117, Issue. 3, p. 035701.


    Minikayev, R. Paszkowicz, W. Piszora, P. Knapp, M. Bähtz, C. and Podsiadło, S. 2015. Thermal expansion of polycrystalline gallium nitride: an X-ray diffraction study. X-Ray Spectrometry, Vol. 44, Issue. 5, p. 382.


    Su, Guan-Lin Frost, Thomas Bhattacharya, Pallab and Dallesasse, John M. 2015. Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm). Optics Express, Vol. 23, Issue. 10, p. 12850.


    Zhang, R. Zhao, W.S. Yin, W.Y. Zhao, Z.G. and Zhou, H.J. 2015. Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs. Diamond and Related Materials, Vol. 52, p. 25.


    Wu, Tzeng Tsong Chen, Hao Wen Lan, Yu Pin Lu, Tien Chang and Wang, Shing Chung 2014. Suspended GaN-based band-edge type photonic crystal nanobeam cavities. Optics Express, Vol. 22, Issue. 3, p. 2317.


    Zhang, R. Zhao, W.S. and Yin, W.Y. 2014. Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs. Microelectronics Reliability, Vol. 54, Issue. 3, p. 575.


    Ho, Jian Wei Zhang, Li Wee, Qixun Tay, Andrew A.O. Heuken, Michael and Chua, Soo-Jin 2013. Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates. Journal of Crystal Growth, Vol. 383, p. 1.


    Ju, Guangxu Fuchi, Shingo Tabuchi, Masao and Takeda, Yoshikazu 2013. In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells. Journal of Crystal Growth, Vol. 370, p. 36.


    Sohal, S. Feng, W. Pandikunta, M. Kuryatkov, V. V. Nikishin, S. A. and Holtz, M. 2013. Influence of phonons on the temperature dependence of the band gap of AlN and AlxGa1−xN alloys with high AlN mole fraction. Journal of Applied Physics, Vol. 113, Issue. 4, p. 043501.


    Hicks, M.-L. Tabeart, J. Edwards, M. J. Le Boulbar, E. D. Allsopp, D. W. E. Bowen, C. R. and Dent, A. C. E. 2012. High Temperature Measurement of Elastic Moduli of (0001) Gallium Nitride. Integrated Ferroelectrics, Vol. 133, Issue. 1, p. 17.


    Domènech-Amador, Núria Cuscó, Ramon Artús, Luis Yamaguchi, Tomohiro and Nanishi, Yasushi 2011. Raman scattering study of anharmonic phonon decay in InN. Physical Review B, Vol. 83, Issue. 24,


    Figge, S Aschenbrenner, T Kruse, C Kunert, G Schowalter, M Rosenauer, A and Hommel, D 2011. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, Vol. 22, Issue. 2, p. 025603.


    Kim, Young-Il Li, Jun Zhang, Jin-Ping and Seshadri, Ram 2011. GaN powders from ammonolysis: Preparation, structure, morphology, and optical properties. Solid State Sciences, Vol. 13, Issue. 1, p. 216.


    Chou, Mitch M. C. Hang, Da-Ren Chang, Liuwen Chen, Chenlong Yang, Wen-Fu Li, Chu-An and Wu, Jih-Jen 2010. Improved quality of nonpolar m-plane GaN [1010] on LiAlO[sub 2] substrate using a modified chemical vapor deposition. Journal of Applied Physics, Vol. 107, Issue. 1, p. 013502.


    Edwards, M J Bowen, C R Allsopp, D W E and Dent, A C E 2010. Modelling wafer bow in silicon–polycrystalline CVD diamond substrates for GaN-based devices. Journal of Physics D: Applied Physics, Vol. 43, Issue. 38, p. 385502.


    Jiang, B. Zuo, J. M. Holec, D. Humphreys, C. J. Spackman, M. and Spence, J. C. H. 2010. Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. Acta Crystallographica Section A Foundations of Crystallography, Vol. 66, Issue. 4, p. 446.


    Richard, M.-I. Highland, M. J. Fister, T. T. Munkholm, A. Mei, J. Streiffer, S. K. Thompson, Carol Fuoss, P. H. and Stephenson, G. B. 2010. In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN. Applied Physics Letters, Vol. 96, Issue. 5, p. 051911.


    ×

Lattice parameters and thermal expansion of GaN

  • Robert R. Reeber (a1) and Kai Wang (a1)
  • DOI: http://dx.doi.org/10.1557/JMR.2000.0011
  • Published online: 01 January 2011
Abstract

Neutron powder diffraction methods with Rietveld analysis are utilized to determine GaN lattice parameters from 15 to 298.1 K. Using these measurements and literature data, we calculated the thermal expansion of gallium nitride (GaN) and predicted its higher temperature thermal expansion. The results are compared with available experimental data and earlier work.

Copyright
Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

2.K. Wang and R.R. Reeber , J. Phys. Chem. Solids 56, 895 (1995).

4.K. Wang and R.R. Reeber , Geophys. Res. Lett. 22, 1297 (1995).

5.R.R. Reeber and K. Wang , J. Electr. Mat. 25, 63 (1996).

6.K. Wang and R.R. Reeber , J. Mater. Res. 11, 1800 (1996).

9.R.R. Reeber , Phys. Status Solidi. A 32, 321 (1975).

11.I. Suzuki , S. Okajima , and K. Seya , J. Phys. Earth 27, 63 (1979).

12.E. Ejder , Phys. Status Solidi. A 23, K87 (1974).

13.C.M. Balkas and R.F. Davis , J. Am. Ceram. Soc. 79, 2309 (1996).

15.L.W. Finger , D.E. Cox , and A.P. Jephcoat , J. Appl. Cryst. 27, 892 (1994).

16.T. Detchprohm , K. Hiramatsu , K. Itoh , and I. Akasaki , Jpn. J. Appl. Phys. 31, L1454 (1992).

18.H.P. Maruska and J.J. Tietjen , Appl. Phys. Lett. 15, 327 (1969).

20.M. Leszczynski , T. Suski , H. Teisseyre , P. Perlin , I. Grzegory , J. Jun , S. Porowski , and T.D. Moustakas , J. Appl. Phys. 76, 4909 (1994)

21.M. Leszczynski , H. Teisseyre , T. Suski , I. Grzegory , M. Bockowski , J. Jun , B. Palosz , and S. Porowski , Acta. Phys. Pol. 90, 887 (1996).

22.S.I. Novikova , in Physics of III–V Compounds, Semiconductors and Semimetals Vol. 2, edited by R.K. Willardson and A.C. Beer (Academic Press, New York, 1966), p. 33.

24.P. Perlin , C. Jauberthie-Carillon , J.P. Itie , A. San Miguel , I. Grzegory , and A. Polian , Phys. Rev. B 45, 83 (1992).

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×