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Low dislocation density GaAs grown by the vertical Bridgman technique

Published online by Cambridge University Press:  31 January 2011

R. E. Kremer ,
D. Francomano ,
G. H. Beckhart  and
K. M. Burke
R. E. Kremer
Affiliation:
Crystal Specialties, Int'l., 2853 Janitell Road, Colorado Springs, Colorado 80906
D. Francomano
Affiliation:
Crystal Specialties, Int'l., 2853 Janitell Road, Colorado Springs, Colorado 80906
G. H. Beckhart
Affiliation:
Crystal Specialties, Int'l., 2853 Janitell Road, Colorado Springs, Colorado 80906
K. M. Burke
Affiliation:
Crystal Specialties, Int'l., 2853 Janitell Road, Colorado Springs, Colorado 80906
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Abstract

We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a form of vertical Bridgman (VB) growth, is capable of producing either doped (semiconducting) or undoped semi-insulating GaAs with very low dislocation density.

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Articles
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Journal of Materials Research , Volume 5 , Issue 7 , July 1990 , pp. 1468 - 1474
Copyright
Copyright © Materials Research Society 1990

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