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A low-cost processing of CuIn(SexS1−x)2 films: Using sulfides nanoparticle precursors

Published online by Cambridge University Press:  05 December 2012

Jing Qian
Affiliation:
Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Guilin Chen
Affiliation:
Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Wen Wang
Affiliation:
Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Guoshun Jiang*
Affiliation:
Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: gsjiang@ustc.edu.cn
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Abstract

Most CuIn(SexS1−x)2 (CISS) thin films are deposited via conventional two-stage process. However, a significant problem related to the conventional two-stage process is the separation of CuInSe2 and CuInS2 phases. In this article, single-phase CISS thin films have been successfully prepared by selenizing sulfides of copper and indium. The mixed sulfides of Cu–In precursors were synthesized by coprecipitation method and then partly reduced. The inks containing partly reduced powders and organic binders were deposited onto glass substrate using a spin-coating technique. After coating, the precursor films were selenized to get CISS. X-ray diffraction and energy dispersive x-ray spectroscopy data show that the single (112) peak position changed with the variation of Se/S ratio. The absorption energy Egchanges linearly with Se/(Se + S) calculated by ultraviolet–vis absorption spectra. Those results confirm the formation of single-phase CISS with homogenous composition.

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Articles
Copyright
Copyright © Materials Research Society 2012

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