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Low-pressure metalorganic chemical vapor deposition of photoluminescent Eu-doped Y2O3 films

Published online by Cambridge University Press:  31 January 2011

Gary A. West
Affiliation:
Allied-Signal Inc., P.O. Box 1021R, Morristown, New Jersey 07962
K. W. Beeson
Affiliation:
Allied-Signal Inc., P.O. Box 1021R, Morristown, New Jersey 07962
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Abstract

We have produced thin photoluminescent films of Eu-doped Y2O3 (Y2O3: Eu) by low-pressure metalorganic chemical vapor deposition (MOCVD). Yttrium and europium β-diketonate precursors are thermally decomposed in a hot-walled MOCVD reactor in the presence of oxygen at a total reactor pressure of 1 Torr. The films are microcrystalline and photoluminescent as-deposited and contain <1 at.% of carbon contamination. Subsequent annealing at 1200°C in air enhances and stabilizes the luminescence. We have measured the photoluminescent lifetimes of the MOCVD films as a function of temperature for the Eu+35D17F1 and 5D07F2 transitions using excimer laser excitation at 248 nm. We present a kinetic model which can account for the observed emission lifetimes from 20–1000°C.

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Articles
Copyright
Copyright © Materials Research Society 1990

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