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Low-temperature fabrication of pyroelectric Ba0.8Sr0.2TiO3 thin films by a sol-gel process

Published online by Cambridge University Press:  26 November 2012

Jian-Gong Cheng*
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, Peoples Republic of China
Jun Tang
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, Peoples Republic of China
Shao-Ling Guo
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, Peoples Republic of China
Jun-Hao Chu
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, Peoples Republic of China
*
a)Address all correspondence to this author. e-mail: jgcheng@mail.sitp.ac.cn
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Abstract

Ba0.8Sr0.2TiO3 films were fabricated with a 0.05 M solution by a sol-gel process at temperatures between 550 and 650 °C. Analysis by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy revealed that the films annealed at 650 °C showed pure perovskite phase, tetragonal structure, and columnar grains with an average grain size of 150 nm. Electrical measurements performed on the films annealed at 650 °C showed two dielectric peaks in the dielectric constant–temperature curve, a remnant polarization of 1.4 μC/cm2, a coercive field of 18.3 kV/cm, and good insulating property. The measured pyroelectric coefficient for the films annealed at 650 °C was larger than 3.1 × 10−4 C/m2K at the temperatures ranging from 10 to 26 °C and reached the maximum value of 4.1 × 10−4 C/m2K at 16 °C. The excellent pyroelectric property rendered the Ba0.8Sr0.2TiO3 films annealed at 650 °C promising for uncooled infrared detectors and thermal imaging applications.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

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