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Measurement of electromigration activation energy in eutectic SnPb and SnAg flip-chip solder joints with Cu and Ni under-bump metallization

Published online by Cambridge University Press:  31 January 2011

Hsiao-Yun Chen  and
Chih Chen
Chih Chen*
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: chih@faculty.nctu.edu.tw
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Abstract

Electromigration activation energy is measured by a built-in sensor that detects the real temperature during current stressing. Activation energy can be accurately determined by calibrating the temperature using the temperature coefficient of resistivity of an Al trace. The activation energies for eutectic SnAg and SnPb solder bumps are measured on Cu under-bump metallization (UBM) as 1.06 and 0.87 eV, respectively. The activation energy mainly depends on the formation of Cu–Sn intermetallic compounds. On the other hand, the activation energy for eutectic SnAg solder bumps with Cu–Ni UBM is measured as 0.84 eV, which is mainly related to void formation in the solder.

Keywords

Packaging
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 9 , September 2010 , pp. 1847 - 1853
Copyright
Copyright © Materials Research Society 2010

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