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Mechanical strength and microstructure of oxygen ion-implanted Al films

Published online by Cambridge University Press:  03 March 2011

S. Bader ,
P.A. Flinn ,
E. Arzt  and
W.D. Nix
S. Bader
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
P.A. Flinn
Affiliation:
Intel Corporation, SC9-45, 2250 Mission College Boulevard, Santa Clara, California 95124, and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Stuttgart, Germany
W.D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
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Abstract

The influence of finely dispersed, stable particles on the mechanical strength and microstructure of Al films on Si substrates has been studied. Aluminum oxide particles were produced in Al films by oxygen ion implantation, and the grain size was increased by a laser reflow treatment. Transmission electron microscopy (TEM) was employed to observe the oxide particles and the grain structure in the films after subsequent annealing, and the wafer curvature technique was used to study the deformation properties of the films as a function of temperature. Significant particle strengthening was obtained in the coarse-grained films in tension as well as in compression. In the as-deposited and ion-implanted films a very fine grain size of only 0.35 μm is stabilized after annealing which causes considerable softening of the film in compression at higher temperature because of the enhancement of grain boundary and volume diffusion controlled relaxation mechanisms. However, in tension at low temperature these films show high stresses comparable to those of the laser reflowed and ion-implanted films. The results are discussed in the light of TEM observations.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 2 , February 1994 , pp. 318 - 327
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Doerner, M. F. and Nix, W. D., CRC Critical Reviews in Solid State and Materials Sciences (Stresses and Deformation Processes in Thin Films on Substrates, Vol. 14), (CRC Press, Boca Raton, FL, 1988), pp. 225–268.Google Scholar
2Blech, J. R. and Tai, K. L., Appl. Phys. Lett. 30, 387 (1977).CrossRefGoogle Scholar
3Arzt, E. and Nix, W. D., J. Mater. Res. 6, 731 (1991).CrossRefGoogle Scholar
4Brown, L. M. and Ham, R. K., Strengthening Methods in Crystals, edited by Kelly, A. and Nicholson, R. B. (Applied Science Publisher, London, 1971), p. 126.Google Scholar
5Sanchez, J. E. Jr., McKnelly, L. T., and Morris, J. W. Jr., in Phase Transformation Kinetics in Thin Films, edited by Chen, M., Thompson, M. O., Schwarz, R., and Libera, M. (Mater. Res. Soc. Symp. Proc. 230, Pittsburgh, PA, 1992).Google Scholar
6Townsend, P. H., Ph.D. Dissertation, Stanford University (1987).Google Scholar
7Hollemann-Wiberg, Lehrbuch der Anorganischen Chemie,Walter deGryter (1976), p. 649.Google Scholar
8Chen, S. and Ong, E., Proc. SPIE's 1989 Symp. on Microelectronic Integrated Processing: Conference on Laser/Optical Processing of Electronic Materials, Santa Clara, CA, Oct. 10–11 (1989).Google Scholar
9Flinn, P. A., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J. C., Nix, W. D., Barnett, D. M., and Smith, D. A. (Mater. Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1989), p. 41.Google Scholar
10Bravman, J. C. and Sinclair, R., J. Electron Microsc. Technique 1, 53 (1984).CrossRefGoogle Scholar
11Edington, J. W., Practical Electron Microscopy in Materials Science (TechBooks, Herndon, VA, 1976), p. 213.Google Scholar
12Natl. Bur. Stand. (U.S.), Circ. 539, 93 (1960).Google Scholar
13Stumpf et al, Ind. Eng. Chem. 42, 1398 (1950).Google Scholar
14Venkatraman, R., Chen, S., and Bravman, J. C., J. Vac. Sci. Technol. A 9 (4), 2536 (Jul/Aug 1991).Google Scholar
15Gibbs, G. B., Philos. Mag. 13, 589 (1966).CrossRefGoogle Scholar
16Wolfram Research Inc., Champaign, IL.Google Scholar
17Frost, H. J. and Ashby, M. F., Deformation-Mechanism Maps (Pergamon Press, Oxford, 1982), ISBN 0-08-029337-9.Google Scholar
18Jackson, M. S. and Li, Che-Yu, Acta Metall. 30, 1993–2000 (1982).CrossRefGoogle Scholar
19Sanchez, J. E. Jr., and Arzt, E., Scripta Metall. 27, 285 (1992).CrossRefGoogle Scholar
20Arzt, E., Kraft, O., Sanchez, J., Bader, S., and Nix, W. D., in Thin Films: Stresses and Mechanical Properties III, edited by Nix, W. D., Bravman, J. C., Arzt, E., and Freund, L. B. (Mater. Res. Soc. Symp. Proc. 239, Pittsburgh, PA, 1992), p. 677.Google Scholar