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The mechanism of sputter-induced epitaxy modification in YBCO (001) films grown on MgO (001) substrates

Published online by Cambridge University Press:  31 January 2011

Y. Huang ,
B. V. Vuchic ,
M. Carmody ,
P. M. Baldo ,
K. L. Merkle ,
D. B. Buchholz ,
S. Mahajan ,
J. S. Lei ,
P. R. Markworth  and
R. P. H. Chang
...Show all authors
Y. Huang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
B. V. Vuchic
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
M. Carmody
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
P. M. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
K. L. Merkle
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
D. B. Buchholz
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
S. Mahajan
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
J. S. Lei
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
P. R. Markworth
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
R. P. H. Chang
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
L. D. Marks
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201
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Abstract

The sputter-induced epitaxy change of in-plane orientation occurring in YBa2Cu3O7-x (001) thin films grown on MgO (001) substrates by pulsed organo-metallic beam epitaxy (POMBE) is investigated by a series of film growth and characterization experiments, including RBS and TEM. The factors influencing the orientation change are systematically studied. The experimental results suggest that the substrate surface morphology change caused by the ion sputtering and the Ar ion implantation in the substrate surface layer are not the major factors that affect the orientation change. Instead, the implantation of W ions, which come from the hot filament of the ion gun, and the initial Ba deposition layer in the YBCO film growth play the most important roles in controlling the epitaxy orientation change. Microstructure studies show that a BaxMg1-xO buffer layer is formed on top of the sputtered substrate surface due to Ba diffusion into the W implanted layer. It is believed that the formation of this buffer layer relieves the large lattice mismatch and changes the YBCO film from the 45° oriented growth to the 0° oriented growth.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 12 , December 1998 , pp. 3378 - 3388
Copyright
Copyright © Materials Research Society 1998

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