Hostname: page-component-7dd5485656-6kn8j Total loading time: 0 Render date: 2025-10-31T04:58:30.424Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure evolution during electromigration between Sn–9Zn solder and Cu

Published online by Cambridge University Press:  03 March 2011

Shih-Ming Kuo  and
Kwang-Lung Lin
Shih-Ming Kuo*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
Kwang-Lung Lin
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
*
a) Address all correspondence to this author. e-mail: smi@mail.mse.ncku.edu.tw
Get access

Abstract

This study investigated the electromigration behavior between Cu and Sn–9Zn solder under a current density of 1.0 × 103 A/cm2 for up to 230 h. The experimental results indicated that Cu5Zn8 was formed at the interface between Cu and the cathode side of the Sn–9Zn solder as well as in the bulk near the anode. Consumption of Cu was also observed for the Cu plating on the cathode side and anodic side, but with less compound formation and Cu consumption at the anode. The intermetallic compound layer on the cathode side was always thicker than that on the anode side after the same current-stressing time. The effect of chemical potential overwhelms electromigration in inducing Zn diffusion when a counterflow of electrons and chemical potential gradient exists. Voids formed at the Cu5Zn8–solder interface inside the solder regardless of the direction of current flow.

Keywords

Electromigration

Information

Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1240 - 1249
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Yeh, E.C.C., Choi, W.J., Tu, K.N., Elenius, P., and Balkan, H.: Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80, 580 (2002).CrossRefGoogle Scholar
2Hu, Y.C., Lin, Y.H., Kao, C.R., and Tu, K.N.: Electromigration failure in flip chip solder joints due to rapid dissolution of copper. J. Mater. Res. 18, 2544 (2003).CrossRefGoogle Scholar
3Ye, H., Basaran, C., and Hopkins, D.: Thermomigration in Pn-Sn solder joints under joule heating during electric current stressing. Appl. Phys. Lett. 82, 1045 (2003).CrossRefGoogle Scholar
4Lee, T.Y., Tu, K.N., and Frear, D.F.: Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization. J. Appl. Phys. 90, 4502 (2001).CrossRefGoogle Scholar
5Lin, Y.H., Hu, Y.C., Tsai, C.M., Kao, C.R., and Tu, K.N.: In situ observation of the void formation-and-propagation mechanism in solder joints under current-stressing. Acta Mater. 53, 2029 (2005).CrossRefGoogle Scholar
6Choi, W.J., Yeh, E.C.C., and Tu, K.N.: Mean-time-to-failure study of flip chip solder joints on Cu/Ni(V)/Al thin-film under-bump-metallization. J. Appl. Phys. 94, 5665 (2003).CrossRefGoogle Scholar
7Nah, J.W., Paik, K.W., Suh, J.O., and Tu, K.N.: Mechanism of electromigration-induced failure in the 97Pb-3Sn and 37Pb-63Sn composite solder joints. J. Appl. Phys. 94, 7560 (2003).CrossRefGoogle Scholar
8Lin, Y.H., Tsai, C.M., Hu, Y.C., Lin, Y.L., and Kao, C.R.: Electromigration-induced failure in flip-chip solder joints. J. Electron. Mater. 34, 1 (2005).CrossRefGoogle Scholar
9Shao, T.L., Chen, Y.H., Chiu, S.H., and Chen, C.: Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni(P)/Au metallization pads. J. Appl. Phys. 96, 4518 (2004).CrossRefGoogle Scholar
10Nah, J.W., Suh, J.O., and Tu, K.N.: Effect of current crowding and joule heating on electromigration-induced failure in flip chip composite solder joints tested at room temperature. J. Appl. Phys. 98, 013715 (2005).CrossRefGoogle Scholar
11Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 (2003).CrossRefGoogle Scholar
12Gan, H. and Tu, K.N.: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples. J. Appl. Phys. 97, 063514 (2005).CrossRefGoogle Scholar
13Chen, C.M. and Chen, S.W.: Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures. Acta Mater. 50, 2461 (2002).CrossRefGoogle Scholar
14Chen, C.M. and Chen, S.W.: Electromigration effect upon the Sn-0.7wt%Cu/Ni and Sn-3.5wt%Ag/Ni interfacial reactions. J. Appl. Phys. 90, 1208 (2001).CrossRefGoogle Scholar
15Orchard, H.T. and Greer, A.L.: Electromigration effects on compound growth at interfaces. Appl. Phys. Lett. 86, 231906 (2005).CrossRefGoogle Scholar
16Salam, B., Ekere, N.N., and Rajkumar, D.: Study of the interface microstructure of Sn–Ag–Cu lead-free solders and the effect of solder volume on intermetallic layer formation. In Proceedings of 51st Electronic Component & Technology Conference (IEEE, Piscataway, NJ, 2001), p. 471.Google Scholar
17Islam, R.A., Wu, B.Y., Alam, M.O., Chan, Y.C., and Jillek, W.: Investigations on microhardness of Sn-Zn based lead-free solder alloys as replacement of Sn-Pb solder. J Alloys Compd. 392, 149 (2005).CrossRefGoogle Scholar
18Islam, M.N., Chan, Y.C., Rizvi, M.J., and Jillek, W.: Investigations of interfacial reactions of Sn-Zn based and Sn–Ag–Cu lead-free solder alloys as replacement for Sn-Pb solder. J. Alloys Compd. 400, 136 (2005).CrossRefGoogle Scholar
19Lee, B.J., Hwang, N.M., and Lee, H.M.: Prediction of interface reaction products between Cu and various solder alloys by thermodynamic calculation. Acta Mater. 45, 1867 (1997).CrossRefGoogle Scholar
20Nah, J.W., Ren, F., Tu, K.N., Venk, S., and Gamara, G.: Electromigration in Pb-free flip chip solder joints on flexible substrates. J. Appl. Phys. 99, 023520 (2006).CrossRefGoogle Scholar
21Shewmon, P.: Diffusion in Solids (Materials Research Society, Warrendale, PA, 1989).Google Scholar
22Liu, C.Y., Chen, C., and Tu, K.N.: Electromigration in Sn-Pb solder strips as a function of alloy composition. J. Appl. Phys. 88, 5703 (2000).CrossRefGoogle Scholar
23Huynh, Q.T., Liu, C.Y., Chen, C., and Tu, K.N.: Electromigration in eutectic SnPb solder lines. J. Appl. Phys. 89, 4332 (2001).CrossRefGoogle Scholar
24Liu, C.Y., Chen, C., Liao, C.N., and Tu, K.N.: Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes. Appl. Phys. Lett. 75, 58 (1999).CrossRefGoogle Scholar
25Dyson, B.F., Anthony, T.R., and Turnbull, D.: Interstitial diffusion of copper in tin. J. Appl. Phys. 38, 3408 (1967).CrossRefGoogle Scholar
26Date, M., Tu, K.N., Shoji, T., Fujiyoshi, M., and Sato, K.: Interfacial reactions and impact reliability of Sn-Zn solder joints on Cu or electroless Au/Ni(P) bond-pads. J. Mater. Res. 19, 2887 (2004).CrossRefGoogle Scholar
27Huang, F.H. and Huntington, H.B.: Diffusion of Sb124, Cd109, Sn113, and Zn65 in tin. Phys. Rev. B: Condens. Matter 9, 1479 (1974).CrossRefGoogle Scholar
28Chang, T.C., Wang, M.C., and Hon, M.H.: Crystal growth of the intermetallic compounds at the Sn–9Zn-xAg/Cu interface during isothermal aging. J. Cryst. Growth 252, 401 (2003).CrossRefGoogle Scholar
29Chang, T.C., Wang, M.C., and Hon, M.H.: Morphology and adhesion strength of the Sn–9Zn-3.5Ag/Cu interface after aging. J. Cryst. Growth 263, 223 (2004).CrossRefGoogle Scholar
30Yu, S.P., Lin, H.J., Hon, M.H., and Wang, M.C.: Effects of process parameters on the soldering behavior of the eutectic Sn-Zn solder on Cu substrate. J. Mater. Sci.: Mater. Electron. 11, 461 (2000).Google Scholar
31Yoon, J.W. and Jung, S.B.: Interfacial reactions and shear strength on Cu and electrolytic Au/Ni metallization with Sn-Zn solder. J. Mater. Res. 21, 1590 (2006).CrossRefGoogle Scholar