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Microstructure observations of silicon carbide nanorods

  • H. Y. Peng (a1), X. T. Zhou (a1), H. L. Lai (a1), N. Wang (a1) and S. T. Lee (a1)
  • DOI: http://dx.doi.org/10.1557/JMR.2000.0290
  • Published online: 01 January 2011
Abstract

The microstructures of β-SiC nanorods synthesized by hot-filament chemical vapor deposition were studied in detail by high-resolution electron microscopy. Two distinct types of nanorods were identified. The longer nanorods (lengths > 0.1 mm) contained globules at their tips and a relatively low density of stacking faults perpendicular to their [111] growth direction. It was also observed that SiC nanorods that grew along [100] direction contained no planar defects. Meanwhile, Ni was found to be an effective catalyst for SiC nanorod growth. The short nanorods (lengths < 50 nm), which contained no globules at their ends, can grow along [111], [100], or [112] direction. The growth of these nanorods was interpreted by a two-dimensional vapor–solid mechanism.

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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
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