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Microstructure of gas-atomized Al-20 wt. % Si-1 wt. % Ni powders studied by electron microscopy

Published online by Cambridge University Press:  03 March 2011

Byong-Taek Lee ,
Byong-Sun Chun  and
Kenji Hiraga
Byong-Taek Lee
Affiliation:
Institute for Materials Research, Tohoku Univers ity, Katahira, Aoba-ku, Sendai 980, Japan
Byong-Sun Chun
Affiliation:
Engineering Research Center for Rapidly Solidified Materials, Chungnam National University, Daejeon 302-764, Korea
Kenji Hiraga
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Aoba-ku, Sendai 980, Japan
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Abstract

The microstructure of gas-atomized Al-20 wt. % Si-1 wt. % Ni powders was investigated by electron microscopy. Primary Si crystals about 2 μm in size are homogeneously distributed in the Al matrix. Eutectic Si crystals about 50 nm in size are precipitated with the definite crystallographic relationship of 〈110〉Si ‖ 〈110〉Al. Most of the interfaces between Al and Si are semicoherently bonded with close-packed planes of {111}Si and {111}Al. The special crystallographic relationship and interfaces are interpreted by matching between Si and Al lattice spacings.

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Articles
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Journal of Materials Research , Volume 9 , Issue 10 , October 1994 , pp. 2519 - 2523
Copyright
Copyright © Materials Research Society 1994

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References

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