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Microstructure of QD-like clusters in GaAs/In(As,Bi) heterosystems

  • Igor A. Likhachev (a1), Igor N. Trunkin (a1), Vladimir I. Tsekhosh (a2), Grigory V. Prutskov (a1), Ilia A. Subbotin (a1), Alexey V. Klekovkin (a3), Elkhan M. Pashaev (a1), Alexander L. Vasiliev (a4) and Igor P. Kazakov (a2)...
Abstract

The microstructure of In(As,Bi)/GaAs heterostructures grown by low-temperature molecular beam epitaxy with special attention to the interfaces was studied by scanning/transmission electron microscopy, energy dispersive X-ray microanalysis, and X-ray diffraction and reflectivity. Two samples grown at similar conditions with and without the presence of the Bi-contained layer, formed at 350 °C, are considered. These samples were jointly analyzed to clarify Bi influence on the crystal structure. Two types of QD-like clusters at the GaAs/In(As,Bi) interface were found. The first type exhibited a zinc blend crystal structure, which is typical for A3B5 semiconductors. The second type adopted a tetragonal PbO crystal structure and was found in different orientations. The joint analysis by electron microscopy and X-ray methods demonstrated that the incorporation of Bi atoms into the InAs layer leads to the strain relaxation at the interface in the growth direction. According to electron microscopy data, this strain release is more pronounced around the clusters of the second type.

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a)Address all correspondence to this author. e-mail: a.vasiliev56@gmail.com
References
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1.Wang, L., Zhang, L., Yue, L., Liang, D., Chen, X., Li, Y., Lu, P., Shao, J., and Wang, S.: Novel dilute bismide, epitaxy, physical properties and device application. Crystals 7, 63 (2017).
2.Nagaraja, K.K., Mityagin, Y.A., Telenkov, M.P., and Kazakov, I.P.: GaAs(1−x)Bix: A promising material for optoelectronics applications. Crit. Rev. Solid State Mater. Sci. 42, 239 (2017).
3.Pandya, G.R. and Vyas, S.M.: Characteristic growth features and etching of InBi single crystals. Cryst. Res. Technol. 28, 163 (193).
4.Keen, B., Makin, R., Stampe, P.A., Kennedy, R.J., Sallis, S., Piper, L.J., McCombe, B., and Durbin, S.M.: Growth parameters for thin film InBi grown by molecular beam epitaxy. J. Electron. Mater. 43, 914 (2014).
5.Dominguez, L., Reyes, D.F., Bastiman, F., Sales, L.D., Richards, R.D., Mendes, D., David, J.P.R., and Gonzalez, D.: formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy. Appl. Phys. Express 6, 112601 (2013).
6.Luna, E., Wu, M., Hanke, M., Puustinen, J., Guina, M., and Trampert, A.: Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix/GaAs quantum wells. Nanotechnology 27, 325603 (2016).
7.Wu, M., Luna, E., Puustinen, J., Guina, M., and Trampert, A.: Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi. Nanotechnology 25, 205605 (2014).
8.Reyes, D.F., González, D., Bastiman, F., Dominguez, L., Hunter, C.J., Guerrero, E., Roldan, M.A., Mayoral, A., David, J.P.R., and Sales, D.L.: Photoluminescence enhancement of InAs(Bi) quantum dots by Bi clustering. Appl. Phys. Express 6, 042103 (2013).
9.Goldstein, J., Newbury, D.E., Joy, D.C., Lyman, C.E., Echlin, P., Lifshin, E., Sawyer, L., and Michael, J.R.: Scanning Electron Microscopy and X-Ray Microanalysis (Plenum Press, New York, 1981).
10.Afanas’ev, A.M., Aleksandrov, P.A., and Imamov, R.M.: X-Ray Diffraction Diagnostics of Submicron Layer (Nauka, Moscow, USSR, 1989). (in Russian).
11.Bowen, D.K. and Tanner, B.K.: High Resolution X-Ray Diffractometry and Topography (Taylor & Francis, London, England, 1998).
12.Chuev, M.A., Pashaev, E.M., Koval’chuk, M.V., and Kvardakov, V.V.: Phase relations and the shape of the X-ray rocking curves from heterostructures with quantum wells. JETP Lett. 90, 186 (2009).
13.Daillant, J. and Gibaud, A., eds.: X-Ray and Neutron Reflectivity: Principles and Applications; Lecture Notes in Physics, Vol. 770 (Springer, Berlin, Heidelberg, 2009).
14.Pashaev, E., Chuev, M., Kvardakov, V., Subbotin, I., and Golovanov, A.: X-ray characterization of magnetic digital alloys. Int. J. Mater. Res. 100, 1197 (2009).
15.Hayashi, K.: Review of the applications of X-ray refraction and the X-ray waveguide phenomenon to estimation of film structures. J. Phys.: Condens. Matter 22, 474006 (2010).
16.Zaumseil, P., Krüger, D., Kurps, R., Fursenko, O., and Formanek, P.: Precise measurement of Ge depth profiles in SiGe HBT’s—A comparison of different methods. Solid State Phenom. 95–96, 473 (2004).
17.Kiel, M., Mitzscherling, S., Leitenberger, W., Santer, S., Tiersch, B., Sievers, T.K., Mohwald, H., and Bargheer, M.: Structural characterization of a spin-assisted colloid-polyelectrolyte assembly: Stratified multilayer thin films. Langmuir 26, 18499 (2010).
18.Bobyl, A.V., Gutkin, A.A., Brunkov, P.N., Zamoryanskaya, I.A., Yagovkina, M.A., Musikhin, Y.G., Sakseev, D.A., Konnikov, S.G., Maleev, N.A., Ustinov, V.M., Kopjev, P.S., Punin, V.T., Ilkaev, R.I., and Alferov, Z.I.: The X-ray diffractometry and electron microscopy study of the γ-radiation influence on AlGaAs/InGaAs/GaAs multilayer heterostructures. Semiconductors 40, 687 (2006).
19.Rzaev, M.M., Kazakov, I.P., Kozlovski, V.I., Skasyrsky, Y.K., Onishchenko, E.E., Schäffler, F., Hesser, G., Pashaev, E.M., and Soubbotin, I.A.: Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates. Phys. Status Solidi C 3, 536 (2006).
20.Chesnokov, Y.M., Vasiliev, A.L., Prutskov, G.V., Pashaev, E.M., Subbotin, I.A., Kravtsov, E.A., and Ustinov, V.V.: Microstructure of periodic metallic magnetic multilayer systems. Thin Solid Films 632, 79 (2017).
21.Williams, D.B. and Carter, C.B.: Transmission Electron Microscopy. A Textbook for Materials Scince (Springer Science + Business Media, New York, 2009); pp. 379381.
22.Kubiak, R.: Röntgenographische Untersuchungen der intermetallischen Phasen In5Bi3, In2Bi, und InBi zwischen +60 und −135 °C. Z. Anorg. Allg. Chem. 431, 261 (1977).
23.Stadelmann, P.A.: EMS—A software package for electron diffraction analysis and HREM image simulation in materials science. Ultramicroscopy 21, 131145 (1987).
24.Aronzon, B.A., Pankov, M.A., Rylkov, V.V., Meilikhov, E.Z., Lagutin, A.S., Pashaev, E.M., Chuev, M.A., Kvardakov, V.V., Likhachev, I.A., Vihrova, O.V., Lashkul, A.V., Lahderanta, E., Vedeneev, A.S., and Kervalishvili, P.: Ferromagnetism of low-dimensional Mn-doped III–V semiconductor structures in the vicinity of the insulator-metal transition. J. Appl. Phys. 107, 023905 (2010).
25.Gutakovsky, A.K., Chuvilin, A.L., and Song, S.A.: Application of high-resolution electron microscopy for imaging and quantitative analysis of deformation fields in heterosystems. Bull. Russ. Acad. Sci. Phys. 71, 1426 (2007).
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
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