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The nature of residues following the ashing of arsenic implanted photoresist

Published online by Cambridge University Press:  31 January 2011

Clifton W. Draper ,
Chuck W. Pearce ,
Jere T. Glick ,
Mike Gordon ,
Gwen E. Olness  and
Steven L. Bernasek
Clifton W. Draper
Affiliation:
Bell Laboratories, P.O. Box 900, Princeton, New Jersey 08542
Chuck W. Pearce
Affiliation:
Lucent Technologies, 555 Union Boulevard, Allentown, Pennsylvania 18103
Jere T. Glick
Affiliation:
Lucent Technologies, 555 Union Boulevard, Allentown, Pennsylvania 18103
Mike Gordon
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741
Gwen E. Olness
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08544
Steven L. Bernasek
Affiliation:
Department of Chemistry, Princeton University, Princeton, New Jersey 08544
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Abstract

Extensive analytical characterization indicates that the most significant contaminant following dry processing of As-implanted photoresist is not a carbon-based residue, but is in fact arsenic itself. The arsenic residue is an amorphous form of elemental arsenic, relatively free of oxygen or carbon, that is stable for long periods of time. Since arsenic is not particularly soluble in sulfuric acid, hydrogen peroxide, or their mixtures, it makes sense to pose questions regarding the optimum choice for post-dry processing wet chemical cleans.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2799 - 2808
Copyright
Copyright © Materials Research Society 1997

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