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Nature of the disordered state of hydrogenated amorphous silicon as revealed by the study of anelastic relaxation behavior

Published online by Cambridge University Press:  31 January 2011

Ram Lal ,
A. V. Kulkarni ,
R. O. Dusane ,
V. G. Bhide  and
S. B. Ogale
Ram Lal
Affiliation:
Department of Physics, University of Poona, Pune-411 007, India
A. V. Kulkarni
Affiliation:
Department of Physics, University of Poona, Pune-411 007, India
R. O. Dusane
Affiliation:
School of Energy Studies, University of Poona, Pune-411 007, India
V. G. Bhide
Affiliation:
School of Energy Studies, University of Poona, Pune-411 007, India
S. B. Ogale
Affiliation:
Department of Physics, University of Poona, Pune-411 007, India
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Abstract

The nature of the disordered state of hydrogenated amorphous silicon is examined for the first time by measurement of anelastic relaxation behavior. It is demonstrated that local structural units and their modifications control the relaxations in these films under different conditions of deposition, aging, and light exposure. Specifically, the light-induced state in this material is shown to be characterized by four distinct relaxations.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 3 , June 1989 , pp. 612 - 615
Copyright
Copyright © Materials Research Society 1989

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References

1Physical Properties of Amorphous Materials, edited by Adler, D.Schwartz, B. S. and Steel, M. C. (Plenum Press, New York, 1985).CrossRefGoogle Scholar
2Berry, B. S. and Pritchet, W. C.IBM J. Res. Dev. 19 (4), 334 (1975).CrossRefGoogle Scholar
3Nowick, A. S. and Berry, B. S.Anelastic Relaxation in Crystalline Solids (Academic Press, Inc., New York, 1972).Google Scholar
4Tan, S. I.Berry, B. S. and W. Frank, F. J. in Ion Implantation in Semiconductors and Other Materials, edited by Crowder, B.L. (Plenum Press, Inc., New York, 1973), p. 19.CrossRefGoogle Scholar
5Berry, B. S.Pritchet, W. C. and Tsuei, C. C.Phys. Rev. Lett. 41 411 (1978).Google Scholar
6Ogale, A.S.Bhoraskar, V.N.Ghaisas, S.V.Godbole, V. P.Ogale, S.B. and Raye, B. S.J. Vac. Sci. Technol. Bl (2), 398 (1983).CrossRefGoogle Scholar
7The Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulas, J.D. and Lucovsky, C. (Springer-Verlag, 1984), Vols. 55 and 56.Google Scholar
8Staebler, D. L. and Wronski, C. R.Appl. Phys. Lett. 31 292 (1972).CrossRefGoogle Scholar
9Semiconductors and Semimetals, edited by Pankove, Jacques I. (Academic Press, Inc., New York, 1984), Vol. 21, Part A.Google Scholar
10Bhide, V. G.Dusane, R. O.Rajarshi, S. V.Shaligram, A. D. and David, S. K., J. Appl. Phys. 62 108 (1987).CrossRefGoogle Scholar
11Brodsky, M.H.Cardona, M. and Cuomo, J. J.Phys. Rev. B16 3556 (1977).CrossRefGoogle Scholar
12Knight, J. C.Lucovsky, C. and Nemanich, R. G.Philos. Mag. 34 467 (1978).CrossRefGoogle Scholar
13Dersch, H.Stake, J. and Beichler, J.Phys. Status Solidi B105 265 (1981).CrossRefGoogle Scholar
14Stutzmann, M.Jackson, W. B.Smith, A.J. and Thompson, R.Appl. Phys. Lett. 48 (1), 62 (1986).CrossRefGoogle Scholar